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©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B
RFG60P05E
60A, 50V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
This is a P-Channel power MOSFET manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. It was
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. This type can be operated directly from integrated
circuits.
Formerly developmental type TA09835.
Features
· 60A, 50V
· r
DS(ON)
= 0.030
· Temperature Compensating PSPICE
®
Model
· 2kV ESD Rated
· Peak Current vs Pulse Width Curve
· UIS Rating Curve
· 175
o
C Operating Temperature
· Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P05E
TO-247
RFG60P05E
NOTE:
When ordering, use the entire part number.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Data Sheet
January 2002
©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG60P05E
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-50
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-50
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
60
Refer to Peak Current Curve
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
215
1.43
W
W/
o
C
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
W/
o
C
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
SD
MIL-STD-883, Category B(2)
2
kV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
µ
A, V
GS
= 0V
-50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -50V, V
GS
= 0V
-
-
-1
µ
A
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
-
-
-25
µ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 60A, V
GS
= -10V (Figure 9)
-
-
0.030
Turn-On Time
t
(ON)
V
DD
= -25V, I
D
= 30A, R
L
= 0.83
,
V
GS
= -10V, R
GS
= 2.5
(Figure 13)
-
-
125
ns
Turn-On Delay Time
t
d(ON)
-
20
-
ns
Rise Time
t
r
-
60
-
ns
Turn-Off Delay Time
t
d(OFF)
-
65
-
ns
Fall Time
t
F
-
20
-
ns
Turn-Off Time
t
(OFF)
-
-
125
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -20V
V
DD
= -40V, I
D
= 60A,
R
L
= 0.67
I
g(REF)
= -4mA
-
-
450
nC
Gate Charge at 10V
Q
g(-10)
V
GS
= 0V to -10V
-
-
225
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -2V
-
-
15
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 12)
-
7200
-
pF
Output Capacitance
C
OSS
-
1700
-
pF
Reverse Transfer Capacitance
C
RSS
-
325
-
pF
Thermal Resistance, Junction to Case
R
JC
-
-
0.70
o
C/W
Thermal Resistance, Junction to Ambient
R
JA
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -60A
-
-
-1.75
V
Diode Reverse Recovery Time
t
RR
I
SD
= -60A, dI
SD
/dt = 100A/
µ
s
-
-
200
ns
NOTE:
2. Pulse test: pulse width
300
µ
s maximum, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG60P05E
©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
I
D
,
DRAIN CURRENT (A)
T
C
,
CASE TEMPERATURE (
o
C)
-60
-70
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
THERMAL IMPED
ANCE
Z
JC
,
NORMALIZED
TRANSIENT
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
t, RECTANGULAR PULSE DURATION (s)
-500
-100
-10
-1
-1
-10
-100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
V
DSS
MAX = -50V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
10ms
100ms
DC
100ms
T
C
= 25
o
C, T
J
= MAX RATED
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
-500
t, PULSE WIDTH (s)
I
DM
,
PEAK CURRENT (A)
-50
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
---------------------
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= -10V
T
C
= 25
o
C
RFG60P05E
©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
-200
-100
-10
0.01
0.1
1
10
t
AV
,
TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
0
0
-2
-4
-6
-8
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-40
-80
-120
-160
V
GS
= -20V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4.5V
PULSE DURATION = 80
µs
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
DS(ON)
,
DRAIN
T
O
SOURCE CURRENT (A)
0
175
o
C
25
o
C
-40
-80
-160
-120
PULSE DURATIONM = 80
µs
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= -15V
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
T
J
,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
PULSE DURATION = 80
µs
V
GS
= -10V, I
D
= 60A
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX
2
1.5
1
0.5
0
-80
-40
0
40
80
160
120
200
THRESHOLD
V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
V
GS
= V
DS
, I
D
= 250
µA
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
NORMALIZED DRAIN
T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
µA
RFG60P05E
©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
C
ISS
C
OSS
C
RSS
6000
4000
2000
0
0
-10
-15
-20
-25
C
,
CAP
A
CIT
ANCE (pF)
V
DS
,
DRAIN TO SOURCE VOLTAGE
(V)
8000
-5
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
-50
-37.5
-25
-12.5
0
-10
-7.5
-5
-2.5
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DS
,
DRAIN
T
O
SOURCE
V
O
L
T
A
GE (V)
V
GS
,
GA
TE
T
O
SOURCE
V
O
L
T
A
GE (V)
20
I
G REF
(
)
I
G ACT
(
)
-------------------------
t, TIME (
µs)
80
I
G REF
(
)
I
G ACT
(
)
-------------------------
R
L
= 0.83
I
G(REF)
= 4mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFG60P05E
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