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Part Number RF1S30N06LESM

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©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
RFP30N06LE, RF1S30N06LESM
30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49027.
Features
· 30A, 60V
· r
DS(ON)
= 0.047
· 2kV ESD Protected
· Temperature Compensating PSPICE
®
Model
· Peak Current vs Pulse Width Curve
· UIS Rating Curve
· Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
P30N06LE
RF1S30N06LESM
TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
January 2004
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©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
RFP30N06LE, RF1S30N06LESM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
+10, -8
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
30
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
96
0.645
W
W/
o
C
Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD
2
kV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
µ
A, V
GS
= 0V, Figure 11
60
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A, Figure 10
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated B
VDSS
, V
GS
= 0
-
-
25
µ
A
V
DS
= 0.8 x Rated B
VDSS
, V
GS
= 0, T
C
= 150
o
C
-
-
250
µ
A
Gate to Source Leakage Current
I
GSS
V
GS
= +10, -8V
-
-
±
10
µ
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 30A, V
GS
= 5V, Figure 9
-
-
0.047
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 30A, R
L
= 1
, V
GS
= 5V,
R
GS
= 2.5
,
Figures 13, 16, 17
-
-
140
ns
Turn-On Delay Time
t
d(ON)
-
11
-
ns
Rise Time
t
r
-
88
-
ns
Turn-Off Delay Time
t
d(OFF)
-
30
-
ns
Fall Time
t
f
-
40
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 48V,
I
D
= 30A,
R
L
= 1.6
Figures 18, 19
-
51
62
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
28
34
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.8
2.6
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Figure 12
-
1350
-
pF
Output Capacitance
C
OSS
-
290
-
pF
Reverse Transfer Capacitance
C
RSS
-
85
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
1.55
o
C/W
Thermal Resistance Junction to Ambient
R
JA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 30A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 30A, dI
SD
/dt
= 100A/
µ
s
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width
300ms, Duty Cycle
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFP30N06LE, RF1S30N06LESM
background image
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
O
W
E
R DIS
S
IP
A
T
IO
N M
U
L
T
IP
L
I
E
R
0
0
0.2
0.4
0.6
0.8
1.0
1.2
T
C
,
CASE TEMPERATURE (
o
C)
I
D
,
DRAIN CURRE
NT

(
A
)
40
20
10
0
25
50
75
100
125
150
175
30
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
Z
JC
, NO
RM
AL
IZ
E
D
T
H
E
R
M
A
L
IM
P
E
D
ANCE
0.01
0.1
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
1
10
100
I
D
,
DRAIN CURRE
N
T
(A
)
1
10
200
100
1ms
DC
100ms
10ms
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
I
DM
, P
E
AK CURRE
NT

CAP
ABIL
I
T
Y

(
A
)
500
100
20
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
I
25
175
T
c
­
150
-----------------------
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
RFP30N06LE, RF1S30N06LESM
background image
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
t
AV
,
TIME IN AVALANCHE (ms)
0.01
0.1
1
10
I
AS
,
A
V
AL
AN
CHE
CURRE
NT

(
A
)
1
10
100
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT
(
A
)
0
20
40
60
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 5V
80
100
PULSE DURATION = 80
µ
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX.
25
o
C
175
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
3.0
4.5
6.0
7.5
1.5
0
20
40
60
I
DS
(O
N)
, DRAI
N T
O
S
O
URCE
CURRE
NT
(
A
)
-55
o
C
80
100
V
DD
= 15V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX.
T
J
, JUNCTION TEMPERATURE (
o
C)
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
N
O
RM
AL
IZ
E
D
DRAIN T
O
S
O
UR
CE
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= 5V, I
D
= 30A
O
N
RE
S
I
S
T
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
NO
RM
AL
IZ
E
D
G
A
T
E
T
HRE
S
H
O
L
D V
O
L
T
A
G
E
V
GS
= V
DS
, I
D
= 250
µ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
DRAIN
T
O
S
O
URCE
BRE
AKDO
W
N
V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
µ
A
RFP30N06LE, RF1S30N06LESM
background image
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
2000
1500
500
0
0
5
10
15
20
25
C
,
CA
P
A
CIT
ANCE
(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
RSS
1000
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
60
45
30
15
0
5.0
3.75
2.5
1.25
0
V
DS
, DRAIN
T
O
S
O
URCE
V
O
L
T
A
G
E
(
V
)
V
GS
, G
A
T
E
T
O
S
O
URCE
V
O
L
T
A
G
E
(
V
)
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 2.0
I
G(REF)
= 0.62mA
V
GS
= 5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
I
G(REF)
I
G(ACT)
t, TIME (s)
20
I
G(REF)
I
G(ACT)
80
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
DUT
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
0V
R
GS
R
L
DUT
+
-
V
GS
V
DS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP30N06LE, RF1S30N06LESM