PACKAGE DIMENSIONS
SCHEMATIC
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
5/1/02
Page 1 of 4
© 2002 Fairchild Semiconductor Corporation
DESCRIPTION
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
·
NPN silicon phototransistor
·
Package type: Sidelooker
·
Medium wide reception angle, 50°
·
Package material and color: black epoxy
·
Matched emitter: QEE113
·
Daylight filter
·
High sensitivity
0.175 (4.44)
0.200 (5.08)
0.050 (1.27)
0.020 (0.51) SQ.
(2X)
0.500 (12.70)
MIN
Ø 0.065 (1.65)
Ø 0.095 (2.41)
0.100 (2.54)
0.100 (2.54)
NOM
0.030 (0.76)
0.087 (2.22)
EMITTER
COLLECTOR
Collector
Emitter
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
5/1/02
Page 2 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5.
= 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +100
°C
Storage Temperature
T
STG
-40 to +100
°C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°C
Collector Emitter Voltage
V
CE
30
V
Emitter Collector Voltage
V
EC
5
V
Power Dissipation
(1)
P
D
100
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Sensitivity
PS
--
880
--
nM
Reception Angle
--
±25
--
Deg.
Collector Emitter Dark Current
V
CE
= 10 V, E
e
= 0
I
CEO
--
--
100
nA
Collector-Emitter Breakdown
I
C
= 1 mA
BV
CEO
30
--
--
V
Emitter-Collector Breakdown
I
E
= 100 µA
BV
ECO
5
--
--
V
On-State Collector Current
(5)
QSE113
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
0.25
--
1.50
mA
On-State Collector Current
(5)
QSE114
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
1.00
--
--
mA
Saturation Voltage
(5)
E
e
= 0.5 mW/cm
2
, I
C
= 0.1 mA
V
CE(SAT)
--
--
0.4
V
Rise Time
I
C
= 1mA, V
CC
= 5V, R
L
= 100
t
r
--
8
--
µs
Fall Time
t
f
--
8
--
µs
5/1/02
Page 3 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
E
e
- Radiant Intensity (mW/cm
2
)
0.1
1
I
C(ON)
- Light Current (mA)
10
-1
10
0
10
1
V
CE
= 5V
GaAs Light Source
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
V
CE
- Collector-Emitter Voltage (V)
0
5
10
15
20
25
30
I
CEO
- Dar
k Current (nA)
10
-3
10
-2
10
-1
10
0
10
1
V
CE
- Collector-Emitter Voltage (V)
0.1
1
10
I
L
- Nor
maliz
ed Light Current
10
-2
10
-1
10
0
10
1
Normalized to:
V
CE
= 5V
Ie = 0.5mW/cm
2
T
A
= 25
°C
Ie = 0.5mW/cm
2
Ie = 0.2mW/cm
2
Ie = 0.1mW/cm
2
Ie = 1mW/cm
2
T
A
- Ambient Temperature ( °C)
25
50
75
100
I
CEO
- Nor
maliz
ed Dar
k Current
10
-1
10
0
10
1
10
2
10
3
10
4
Normalized to:
V
CE
= 25V
T
A
= 25
°C
V
CE
= 25V
V
CE
= 10V
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