June 1997
NDP7052 / NDB7052
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
NDP7052
NDB7052
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
50
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Nonrepetitive (t
P
< 50 µs)
±40
I
D
Drain Current
- Continuous
75
A
- Pulsed
225
P
D
Total Power Dissipation @ T
C
= 25°C
150
W
Derate above 25°C
1
W/°C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
1
°C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
NDP7052 Rev.B1
75 A, 50 V. R
DS(ON)
= 0.01
@ V
GS
= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
S
D
G
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note)
W
DSS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 25 V, I
D
= 75 A
550
mJ
I
AR
Maximum Drain-Source Avalanche Current
75
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
50
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 µA, Referenced to 25
o
C
57
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 40 V, V
GS
= 0 V
10
µA
T
J
= 125°C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note)
V
GS(th)
/
T
J
Gate Threshold VoltageTemp. Coefficient
I
D
= 250 µA, Referenced to 25
o
C
-5.2
mV/
o
C
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
2
2.2
3
V
T
J
= 125°C
1.4
1.55
2.4
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 37.5 A
0.008
0.01
T
J
= 125°C
0.011
0.018
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
60
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 37.5 A
52
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
3400
pF
C
oss
Output Capacitance
1300
pF
C
rss
Reverse Transfer Capacitance
460
pF
SWITCHING CHARACTERISTICS
(Note)
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 75 A,
V
GS
= 10 V, R
GEN
= 5
15
30
nS
t
r
Turn - On Rise Time
147
250
nS
t
D(off)
Turn - Off Delay Time
85
150
nS
t
f
Turn - Off Fall Time
165
300
nS
Q
g
Total Gate Charge
V
DS
= 24 V,
I
D
= 37.5 A, V
GS
= 10 V
117
160
nC
Q
gs
Gate-Source Charge
12
nC
Q
gd
Gate-Drain Charge
46
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
75
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
225
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 13 A
(Note)
0.9
1.3
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 37.5 A,
75
150
ns
I
rr
Reverse Recovery Current
dI
F
/dt = 100 A/µs
4
10
A
Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7052 Rev.B1
NDP7052 Rev.B1
Typical Electrical Characteristics
-50
-25
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I =37.5A
D
Figure 3. On-Resistance Variation
with Temperature
.
1
1.5
2
2.5
3
3.5
4
4.5
5
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25°C
125°C
V = 10V
DS
GS
D
T = -55°C
J
Figure 5. Transfer Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
0
20
40
60
80
100
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
4.5
5.0
10.0
5.5
6.5
6.0
8.0
7.0
V =4.0V
GS
Figure 1. On-Region Characteristics.
Figure 4.
On Resistance Variation with
Gate-To- Source Voltage
.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
0.5
1
5
10
60
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V =0V
GS
SD
S
Figure 6.
Body Diode Forward Voltage
Variation with Source Current and Temperature.
2
4
6
8
10
0
0.01
0.02
0.03
0.04
0.05
V , GATE TO SOURCE VOLTAGE (V)
ID=37.5A
GS
R , ON-RESISTANCE (OHM)
DS(ON)
125°C
25°C
0
0.5
1
1.5
2
2.5
3
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
3.5
4.0
4.5
5.0
5.5
7.0
V = 10V
GS
6.0
NDP7052 Rev.B1
Typical Electrical Characteristics
(continued)
0
20
40
60
80
100
120
140
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 37.5A
D
V = 12V
DS
24V
48V
1
5
10
20
50
200
500
1000
2000
6000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
Figure 8.Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
0.5
1
3
5
10
20
30
80
0.5
1
2
5
10
20
50
100
200
400
V , DRAIN-SOURCE VOLTAGE (V))
I , DRAIN CURRENT (A)
DS
D
100µs
1ms
10ms
100ms
DC
R Limit
DS(ON)
V = 10V
SINGLE PULSE
R = 1 C/W
T = 25 °C
GS
C
JC
o
Figure 9. Maximum Safe Operating Area.
0.1
0.3
1
3
10
30
100
300
1,000
0
500
1000
1500
2000
SINGLE PULSE TIME (mS)
POWER (W)
SINGLE PULSE
R =1° C/W
T = 25°C
JC
C
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 1°C/W
JC
JC
JC
T - T = P * R (t)
JC
C
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
Figure 11. Transient Thermal Response Curve.
NDP7052 Rev.B1
PDF 
ZIP