January 1996
NDP603AL / NDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
______________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
NDP603AL
NDB603AL
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
I
D
Drain Current
- Continuous
25
(Note 1)
A
- Pulsed
100
P
D
Total Power Dissipation @ T
C
= 25°C
50
W
Derate above 25°C
0.4
W/°C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
2.5
°C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
NDP603AL.SAM
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
25A, 30V. R
DS(ON)
= 0.022
@ V
GS
=10V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
S
D
G
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 2)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 15 V, I
D
= 25 A
100
mJ
I
AR
Maximum Drain-Source Avalanche Current
25
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1.1
1.5
3
V
T
J
= 125
o
C
0.7
1.1
2.2
V
DS
= V
GS
, I
D
= 10 mA
1.4
1.85
3
T
J
= 125
o
C
1
1.5
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 25 A
0.019
0.022
T
J
= 125
o
C
0.028
0.045
V
GS
= 4.5 V, I
D
= 10 A
0.031
0.04
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
60
A
V
GS
= 4.5 V, V
DS
= 10 V
15
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 25 A
18
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1100
pF
C
oss
Output Capacitance
540
pF
C
rss
Reverse Transfer Capacitance
175
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 25 A,
V
GS
= 10 V, R
GEN
= 24
15
30
ns
t
r
Turn - On Rise Time
70
110
ns
t
D(off)
Turn - Off Delay Time
90
150
ns
t
f
Turn - Off Fall Time
80
130
ns
Q
g
Total Gate Charge
V
DS
= 10 V,
I
D
= 25 A, V
GS
= 10 V
28
40
nC
Q
gs
Gate-Source Charge
5
7
nC
Q
gd
Gate-Drain Charge
7
10
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
25
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 25 A
(Note 2)
1.3
V
Note:
1. Maximum DC current limited by the package.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDP603AL.SAM
NDP603AL.SAM
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5.
Drain Current Variation with Gate
Voltage and Temperature
.
0
2 0
4 0
6 0
8 0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 4V
GS
D
R , NORMALIZED
DS(on)
8.0
7.0
4.5
6.0
5.0
1 0
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V =10V
GS
I = 25A
D
R , NORMALIZED
DS(ON)
0
20
40
60
80
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
-55°C
D
V = 10V
GS
R , NORMALIZED
DS(on)
1
2
3
4
5
6
0
10
20
30
40
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = 10V
DS
GS
D
T = -55°C
J
0.5
1
1.5
2
2.5
0
0.01
0.02
0.03
0.04
0.05
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = 125°C
J
25°C
-55°C
0
1
2
3
4
5
0
20
40
60
80
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.0
4.0
8.0
7.0
5.0
V =10V
GS
DS
D
6.0
4.5
Figure 6.
Sub-threshold Drain Current Variation
with Gate Voltage and Temperature
.
NDP603AL.SAM
Figure 8. Breakdown Voltage Variation with
Temperature.
Figure 7. Gate Threshold Variation with
Temperature
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
(continued)
-50
-25
0
25
50
7 5
100
125
150
175
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
I = 250µA
D
BV , NORMALIZED
DSS
0
5
1 0
15
20
2 5
30
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
V = 5V
DS
10
g
GS
20
I = 25A
D
0.1
0.2
0.5
1
2
5
10
20
30
1 0 0
2 0 0
3 0 0
5 0 0
1 0 0 0
2 0 0 0
2 5 0 0
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
C oss
C rss
f = 1 MHz
V = 0V
GS
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
-50
-25
0
25
50
75
100
125
150
175
0.8
1
1.2
1.4
1.6
1.8
2
2.2
T , JUNCTION TEMPERATURE (°C)
Vth, GATE-SOURCE THRESHOLD VOLTAGE (V)
V = V
DS
GS
J
I = 10mA
D
1 m A
250uA
NDP603AL.SAM
0
10
20
30
40
0
5
10
15
20
25
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
D
FS
V = 10V
DS
125°C
0.1
0.5
1
2
5
10
30
5 0
0.5
1
2
5
10
20
50
1 0 0
1 5 0
V , DRAIN-SOURCE VOLTAGE(V)
I , DRAIN CURRENT (A)
DS
D
V = 20V
SINGLE PULSE
T = 25°C
GS
C
RDS(ON) Limit
1ms
10ms
100ms
DC
1s
0.01
0.1
1
10
100
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 2.5 °C/W
JC
JC
JC
T - T = P * R (t)
JC
C
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
0.01
Figure 13. Transconductance Variation with Drain
Current and Temperature
Figure 15. Maximum Safe Operating Area
Figure 16. Transient Thermal Response Curve
Typical Electrical Characteristics
(continued)
Figure 14. Body Diode Forward Voltage
Variation with Current and Temperature
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
0.2
0.5
1
2
5
10
20
40
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
25°C
-55°C
SD
S
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