MPSA56 / MMBTA56 / PZTA56 PNP General Purpose Amplifier

PNP General Purpose Amplifier

MMBTA56

MPSA56

PZTA56

This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Symbol

Parameter

Value

Units

CES

Collector-Emitter Voltage

CBO

Collector-Base Voltage

EBO

Emitter-Base Voltage

4.0

Collector Current - Continuous

500

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

TA = 25°C unless otherwise noted

TO-92

SOT-23

Mark: 2G

SOT-223

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

Symbol

Characteristic

Max

Units

MPSA56

*MMBTA56

**PZTA56

Total Device Dissipation

Derate above 25

625

5.0

350

2.8

1,000

8.0

mW/

Thermal Resistance, Junction to Case

83.3

C/W

Thermal Resistance, Junction to Ambient

200

357

125

C/W

1997 Fairchild Semiconductor Corporation

MPSA56 / MMBT

A56 / PZT

A56

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Max

Units

(BR)CEO

Collector-Emitter Breakdown Voltage*

= 1.0 mA, I

= 0

(BR)CBO

Collector-Base Breakdown Voltage

= 100

A, I

= 0

(BR)EBO

Emitter-Base Breakdown Voltage

= 100

A, I

= 0

4.0

CEO

Collector-Cutoff Current

= 60 V, I

= 0

0.1

CBO

Collector-Cutoff Current

= 80 V, I

= 0

0.1

ON CHARACTERISTICS

DC Current Gain

= 10 mA, V

= 1.0 V

= 100 mA, V

= 1.0 V

100
100

CE(

sat

)

Collector-Emitter Saturation Voltage

= 100 mA, I

= 10 mA

0.25

BE(

)

Base-Emitter On Voltage

= 100 mA, V

= 1.0 V

1.2

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product

= 100 mA, V

= 1.0 V,

f = 100 MHz

MHz

Spice Model

PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2 Isc=0
Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p Itf=.2
Vtf=2 Xtf=.8 Rb=10)

Typical Characteristics

Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Typical Pulsed Current Gain

vs Collector Current

0.001

0.01

0.1

100

150

200

250

300

I - COLLECTOR CURRENT (A)

I
C

I
N

- 40 °C

V = 1V

125 °C

25 °C

Collector-Emitt er Saturation

Voltage vs Collect or Current

100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRE NT (mA)

-

C

I
T

E (

)

= 10

- 40 °C

125 °C

25 °C

PNP General Purpose Amplifier

(continued)

MPSA56 / MMBT

A56 / PZT

A56

PNP General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Collector-Cutoff Current

vs Ambient Temperature

100

125

0.001

0.01

0.1

T - AMBIENT TEMPERATURE ( C)

CUR

(

V = 60V

Collector Saturation Region

3000

5000

10000

20000

30000

50000

I - BASE CURRENT (uA)

-
EM

I
T

R V

(
V

)

10 mA

100 mA

1 mA

T = 25°C

I =

Gain Bandwidth Product

vs Collector Current

100

150

200

250

300

350

I - COLLECTOR CURRENT (mA)

-

GAI

BAND

I
D

H P

(

)

V = 5V

Input and Output Capacitance

vs Reverse Voltage

0.1

100

V - COLLECTOR VOLTAGE (V)

(

)

f = 1.0 MHz

Base-Emitter Saturation

Voltage vs Collect or Current

100

1000

0.4

0.6

0.8

1.2

I - COLLECTOR CURRE NT (mA)

(

)

= 10

- 40 °C

125 °C

25 °C

Base Emitter ON Voltage vs

Collect or Curre nt

0.1

100

1000

0.2

0.4

0.6

0.8

1.2

I - COLLECTOR CURRE NT (mA)

(

)

(

V = 1V

- 40 °C

125 °C

25 °C

MPSA56 / MMBT

A56 / PZT

A56

TO-92 Tape and Reel Data

March 2001, Rev. B1

TO-92 Packaging
Configuration: Figure 1.0

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

2000 units per

EO70 box for

std option

FSCINT Label

530mm x 130mm x

83mm

Intermediate box

10,000 units maximum

per

intermediate box

for std option

FSCINT Label

114mm x 102mm x 51mm

Immediate Box

Anti-static

Bubble Sheets

(TO-92) BULK PACKING INFORMATION

EOL

CODE

DESCRIPTION

LEADCLIP

DIMENSION

QUANTITY

J18Z

TO-18 OPTION STD

NO LEAD CLIP

2.0 K / BOX

J05Z

TO-5 OPTION STD

NO LEAD CLIP

1.5 K / BOX

NO EOL

CODE

TO-92 STANDARD
STRAIGHT FOR: PKG 92,

NO LEADCLIP

2.0 K / BOX

BULK OPTION

See Bulk Packing

Information table

375mm x 267mm x 375mm

Intermediate Box

FSCINT
Label

Customized
Label

333mm x 231mm x 183mm

Intermediate Box

FSCINT
Label

Customized
Label

TO-92 TNR/AMMO PACKING INFROMATION

Packing

Style

Quantity

EOL code

Reel

2,000

D26Z

2,000

D27Z

Ammo

2,000

D74Z

2,000

D75Z

Unit weight = 0.22 gm
Reel weight with components = 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units

F63TNR
Label

5 Ammo boxes per

Intermediate Box

Customized
Label

327mm x 158mm x 135mm

Immediate Box

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

D9842

SPEC REV:

SPEC:

QTY:

10000

QA REV:

FAIRCHILD SEMICONDUCTOR CORPORATION

HTB:B

(FSCINT)

F63TNR
Label

Customized
Label

5 Reels per

Intermediate Box

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1:

SPEC REV:

SPEC:

QTY: 2000

D/C2:

QTY2:

CPN:

N/F: F (F63TNR)3

F63TNR Label sample

FSCINT Label sample

5 EO70 boxes per
intermediate Box

ustomized

Label

94 (NON PROELECTRON

SERIES), 96

L34Z

TO-92 STANDARD
STRAIGHT FOR: PKG 94

NO LEADCLIP

2.0 K / BOX

(PROELECTRON SERIES

BCXXX, BFXXX, BSRXXX),
97, 98

Part Number MPSA56