MPSA56 / MMBTA56 / PZTA56
PNP General Purpose Amplifier
MMBTA56
MPSA56
PZTA56
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage
80
V
V
CBO
Collector-Base Voltage
80
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
TA = 25°C unless otherwise noted
C
B
E
TO-92
C
B
E
SOT-23
Mark: 2G
B
C
C
SOT-223
E
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Symbol
Characteristic
Max
Units
MPSA56
*MMBTA56
**PZTA56
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°
C
R
JC
Thermal Resistance, Junction to Case
83.3
°
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
125
°
C/W
Discrete POWER & Signal
Technologies
©
1997 Fairchild Semiconductor Corporation
MPSA56 / MMBTA56 / PZTA56
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
4.0
V
I
CEO
Collector-Cutoff Current
V
CE
= 60 V, I
B
= 0
0.1
µ
A
I
CBO
Collector-Cutoff Current
V
CB
= 80 V, I
E
= 0
0.1
µ
A
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
100
100
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 10 mA
0.25
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 100 mA, V
CE
= 1.0 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 100 mA, V
CE
= 1.0 V,
f = 100 MHz
50
MHz
*
Pulse Test: Pulse Width
300
µ
s, Duty Cycle
2.0%
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p
Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Typical Characteristics
PNP General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
P
3
0.001
0.01
0.1
50
100
150
200
250
300
I - COLLECTOR CURRENT (A)
h
-
T
Y
P
I
C
A
L
PU
L
SED
C
U
R
R
EN
T
G
A
IN
FE
- 40 ºC
C
V = 1V
CE
125 °C
25 °C
Collector-Emitter Saturation
Voltage vs Collector Current
10
100
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
C
T
O
R
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
C
C
ESA
T
= 10
- 40 ºC
125 °C
25 °C
MPSA56 / MMBTA56 / PZTA56
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Base Emitter ON Voltage vs
Collector Current
P 3
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
C
BE
O
N
V = 1V
CE
- 40 ºC
125 °C
25 °C
Base-Emitter Saturation
Voltage vs Collector Current
P 3
10
100
1000
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
C
BE
S
A
T
= 10
- 40 ºC
125 °C
25 °C
Collector-Cutoff Current
vs. Ambient Temperature
25
50
75
100
125
0.001
0.01
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
CT
O
R
CU
RR
E
N
T
(
n
A
)
A
CBO
º
V = 60Vz
CB
Collector Saturation Region
3000
5000
10000
20000
30000
50000
0
2
4
6
8
10
I - BASE CURRENT (uA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
LT
A
G
E
(
V
)
CE
B
10 mA
100 mA
1 mA
T = 25°C
I =
C
A
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
100
V - COLLECTOR VOLTAGE(V)
CA
P
A
CI
T
A
NCE
(
p
F
)
C
f = 1.0 MHz
CE
ib
C
ob
Gain Bandwidth Product
vs Collector Current
P
3
1
10
20
50
100
0
10
20
30
40
I - COLLECTOR CURRENT (mA)
f
- G
A
I
N
BAN
DW
I
D
T
H
P
R
O
D
U
C
T
(M
Hz
)
C
T
V = 5V
CE
MPSA56 / MMBTA56 / PZTA56
Typical Characteristics
(continued)
PNP General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- P
O
W
E
R DI
S
S
I
P
A
T
I
O
N (W
)
D
o
SOT-223
TO-92
SOT-23
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