MPSA42 / MMBTA42 / PZTA42
NPN High Voltage Amplifier
This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48.
MMBTA42
MPSA42
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage
300
V
V
CBO
Collector-Base Voltage
300
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA42
*MMBTA42
**PZTA42
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°
C
R
JC
Thermal Resistance, Junction to Case
83.3
°
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
125
°
C/W
PZTA42
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1D
B
C
C
SOT-223
E
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
2000 Fairchild Semiconductor International
MPSA42/MMBTA42/PZTA42 Rev A
MPSA42 / MMBTA42 / PZTA42
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
300
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
300
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
6.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 200 V, I
E
= 0
0.1
µ
A
I
EBO
Emitter-Cutoff Current
V
EB
= 6.0 V, I
C
= 0
0.1
µ
A
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
25
40
40
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 20 mA, I
B
= 2.0 mA
0.5
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 20 mA, I
B
= 2.0 mA
0.9
V
*
Pulse Test: Pulse Width
300
µ
s, Duty Cycle
2.0%
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2
Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n
Itf=5 Vtf=20 Xtf=150 Rb=10)
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
50
MHz
C
cb
Collector-Base Capacitance
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
3.0
pF
NPN High Voltage Amplifier
(continued)
Typical Characteristics
DC Current Gain
vs Collector Current
0.1
1
10
100
20
40
60
80
100
120
140
I - COLLECTOR CURRENT (mA)
h
- DC CUR
RENT GA
IN
F
E
- 40 ºC
25 °C
C
V = 5V
CE
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
P
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
C
O
LL
ECT
O
R
-
EMI
T
T
E
R VOL
T
A
GE (
V
)
C
ESA
T
C
= 10
- 40 ºC
25 °C
125 °C
MPSA42 / MMBTA42 / PZTA42
NPN High Voltage Amplifier
(continued)
Typical Characteristics
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
ITT
E
R VOL
T
A
G
E
(
V
)
BESA
T
C
= 10
- 40 ºC
25 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
IT
T
E
R ON
VO
L
T
A
G
E
(V
)
BE(
O
N)
C
V = 1V
CE
- 40 ºC
25 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
P
25
50
75
100
125
150
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LL
EC
T
O
R C
U
R
R
E
N
T
(
n
A
)
A
V = 150V
CB
º
CB
O
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
1
10
100
1000
1
2
5
10
20
50
100
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E (
p
F)
C cb
C
eb
T = 25 °C
A
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
PO
W
E
R
DIS
S
I
P
A
T
ION
(W
)
D
o
SOT-223
TO-92
SOT-23
TO-92 Tape and Reel Data and Package Dimensions
September 1999, Rev. B
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130mm x
83mm
Intermediate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102mm x 51mm
Immediate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE
DESCRIPTION
LEADCLIP
DIMENSION
QUANTITY
J18Z
TO-18 OPTION STD
NO LEAD CLIP
2.0 K / BOX
J05Z
TO-5 OPTION STD
NO LEAD CLIP
1.5 K / BOX
NO EOL
CODE
TO-92 STANDARD
STRAIGHT
NO LEADCLIP
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267mm x 375mm
Intermediate Box
FSCINT
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Style
Quantity
EOL code
Reel
A
2,000
D26Z
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
Unit weight = 0.22 gm
Reel weight with components = 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
F63TNR
Label
5 Ammo boxes per
Intermediate Box
Customized
Label
327mm x 158mm x 135mm
Immediate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Intermediate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2000
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
TO-92 Tape and Reel Data and Package Dimensions, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style "A", D26Z, D70Z (s/h)
Machine Option "A" (H)
Style "E", D27Z, D71Z (s/h)
Machine Option "E" (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
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