MBR2535CT - MBR2560CT
MBR2535CT - MBR2560CT, Rev. A
MBR2535CT - MBR2560CT
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
©
1999 Fairchild Semiconductor Corporation
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 130
°
C
30
A
i
f(repetitive)
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 130
°
C
30
A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
150
A
P
D
Total Device Dissipation
Derate above 25
°
C
2.0
16.6
W
mW/
°
C
R
JA
Thermal Resistance, Junction to Ambient
60
°
C/W
R
JL
Thermal Resistance, Junction to Lead
1.5
°
C/W
T
stg
Storage Temperature Range
-65 to +175
°
C
T
J
Operating Junction Temperature
-65 to +150
°
C
Parameter
Device
Units
2535CT
2545CT
2550CT
2560CT
Peak Repetitive Reverse Voltage
35
45
50
60
V
Maximum RMS Voltage
24
31
35
42
V
DC Reverse Voltage
(Rated V
R
)
35
45
50
60
V
Voltage Rate of Change (Rated V
R
)
10,000
V/uS
Maximum Reverse Current
@ rated V
R
T
A
= 25
°
C
T
A
= 125
°
C
0.2
40
1.0
50
mA
mA
Maximum Forward Voltage
I
F =
15 A, T
C
= 25
°
C
I
F =
15 A, T
C
= 125
°
C
I
F =
30 A, T
C
= 25
°
C
I
F =
30 A, T
C
= 125
°
C
-
-
0.82
0.73
0.75
0.65
-
-
V
V
V
V
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
1.0
0.5
A
Features
·
Low power loss, high efficiency.
·
High surge capacity.
·
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
·
Metal silicon junction, majority carrier
conduction.
·
High current capacity, low forward
voltage drop.
·
Guard ring for over voltage protection.
TO-220AB
1
2
3
0.412(10.5)
MAX
0.103(2.62)
0.113(2.87)
0.14(3.56)
0.16(4.06)
0.587(14.9)
0.594(15.1)
0.53(13.46)
0.56(14.22)
0.027(0.68)
0.037(0.94)
0.095(2.41)
0.105(2.67)
0.148(3.74)
0.154(3.91)
Dimensions are in: inches (mm)
+
CASE
PIN 2
PIN 3
PIN 1
0.014(0.35)
0.025(0.64)
0.10(2.54)
0.11(2.79)
0.23(5.84)
0.27(6.86)
0.045(1.14)
0.055(1.40)
0.175(4.44)
0.185(4.70)
Discrete POWER & Signal
Technologies
MBR2535CT - MBR2560CT
MBR2535CT - MBR2560CT, Rev. A
Schotty Barrier Rectifier
(continued)
Typical Characteristics
Forward Current Derating Curve
0
25
50
75
100
125
150
175
0
6
12
18
24
30
AMBIENT TEMPERATURE ( C)
F
O
R
W
AR
D CU
RR
E
N
T
(
A
)
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS
º
Transient Thermal Impedance
0.01
0.1
1
10
100
0.1
1
10
100
T. PULSE DURATION (sec.)
TR
A
N
S
I
E
N
T TH
E
R
M
A
L I
M
P
E
D
A
N
C
E
(
C
/
W
)
º
Non-Repetitive Surge Current
1
2
5
10
20
50
100
0
25
50
75
100
125
150
NUMBER OF CYCLES AT 60Hz
PE
AK
F
O
R
W
A
R
D
S
URG
E
CU
RR
ENT
(
A
)
Typical Junction Capacitance
0.1
1
10
100
100
200
500
1000
2000
5000
REVERSE VOLTAGE (V)
J
U
NCT
IO
N CA
P
A
CI
T
A
N
C
E
(
p
F
)
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
Forward Characteristics
0
0.2
0.4
0.6
0.8
1
1.2
0.01
0.1
1
10
50
FORWARD VOLTAGE (V)
F
O
R
W
AR
D CU
RR
E
N
T
(
A
)
Pulse Width = 300
µ
S
2% Duty Cycle
T = 25 C
º
A
T = 150 C
º
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
Reverse Characteristics
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
50
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
R
EVE
R
S
E
C
U
R
R
EN
T
(
m
A
)
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2550CT-MBR2560CT
MBR2535CT-MBR2545CT
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
®
FASTrTM
GTOTM
HiSeCTM
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This datasheet contains the design specifications for
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changes at any time without notice in order to improve
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