©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH32/
32C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW
300
µ
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : KSH32
: KSH32C
- 40
- 100
V
V
V
CEO
Collector-Emitter Voltage : KSH32
: KSH32C
- 40
- 100
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 3
A
I
CP
Collector Current (Pulse)
- 5
A
I
B
Base Current
- 1
A
P
C
Collector Dissipation (T
C
=25
°
C)
15
W
Collector Dissipation (T
a
=25
°
C)
1.56
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: KSH32
: KSH32C
I
C
= - 30mA, I
B
= 0
-40
-100
V
V
I
CEO
Collector Cut-off Current
: KSH32
: KSH32C
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
-50
-50
µ
A
µ
A
I
CES
Collector Cut-off Current
: KSH32
: KSH32C
V
CE
= - 40V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
-20
-20
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
BE
= - 5V, I
C
= 0
-1
mA
h
FE
* DC Current Gain
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
25
10
50
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 3, I
B
= - 375mA
-1.2
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
= - 4A, I
C
= - 3A
-1.8
V
f
T
Current Gain Bandwidth Product
V
CE
= -10V, I
C
= - 500mA
3
MHz
KSH32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
· Lead Formed for Surface Mount Application (No Suffix)
· Straight Lead (I-PAK, "- I" Suffix)
· Electrically Similar to Popular TIP32 and TIP32C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
©2002 Fairchild Semiconductor Corporation
KSH32/
32C
Rev. A4, October 2002
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
-0.01
-0.1
-1
-10
1
10
100
1000
V
CE
= -2V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
-1E-3
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
at)
[
V
], S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
1
10
100
1000
C
ob
(
p
F)
,
CAPACI
T
A
N
CE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-0.01
-0.1
-1
-10
0.1
1
t
R
, V
CC
=-30V
t
R
, V
CC
=-10V
t
C
= 10.I
B
t
D
, V
BE
(off)=-2V
t
R
, t
D
[
µ
s
], T
URN
ON T
I
M
E
I
C
[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
0.1
1
t
STG
t
F
, V
CC
=-30V
I
C
= 10.I
B
t
F
, V
CC
(off)=-10V
t
F
, t
ST
G
[
µ
s],
T
U
R
N
O
F
F
T
I
M
E
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
KSH
32
10
0
µ
s
50
0
µ
s
KSH
32
C
1m
s
DC
I
CP
(max)
I
C
(max)
I
C
[
A
]
,
COL
L
ECT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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