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©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC532
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width = 5ms, Duty Cycle
10%
Thermal Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
800
V
V
CEO
Collector-Emitter Voltage
500
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current (DC)
5
A
I
CP
*Collector Current (Pulse)
10
A
I
B
Base Current (DC)
2
A
I
BP
*Base Current (Pulse)
4
A
P
C
Power Dissipation(T
C
=25
°
C)
100
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Characteristics
Rating
Unit
R
jc
Thermal Resistance
Junction to Case
1.25
°
C/W
R
ja
Junction to Ambient
62.5
KSC5321
High Voltage and High Reliability
· High speed Switching
· Wide Safe Operating Area
1.Base 2.Collector 3.Emitter
1
TO-220
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC532
1
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 1mA, I
E
= 0
800
-
-
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA, I
B
= 0
500
-
-
V
BV
EBO
Emitter-Base Breakdown Voltage
I
C
=1mA, I
C
= 0
7
-
-
V
I
CBO
Collector Cut-off Current
V
CB
= 800V, I
E
= 0
-
-
100
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 7V, I
C
= 0
-
-
10
µ
A
h
FE1
h
FE2
DC Current Gain
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
15
8
-
-
40
-
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A, I
B
= 0.6A
-
-
1.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 3A, I
B
= 0.6A
-
-
1.5
V
f
T
Current Gain bandwidth Product
V
CE
= 10V, I
C
= 0.6A
-
14
-
MHz
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1MHz
-
65
100
pF
C
ib
Input Capacitance
V
EB
= 7V, I
C
= 0, f = 1MHz
-
1400
2000
pF
t
ON
Turn ON Time
V
CC
= 125V, I
C
= 1A
I
B1
= -I
B2
= 0.2A
R
L
= 125
-
-
0.5
µ
s
t
STG
Storage Time
-
6.5
µ
s
t
F
Fall Time
-
-
0.3
µ
s
t
ON
Turn ON Time
V
CC
= 250V, I
C
= 4A
I
B1
= 0.8A, I
B2
= -1.6A
R
L
= 62.5
-
-
0.5
µ
s
t
STG
Storage Time
-
-
3.0
µ
s
t
F
Fall Time
-
-
0.3
µ
s
©2000 Fairchild Semiconductor International
KSC532
1
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Switching Time
Figure 6. Safe Operating Area
0
2
4
6
8
10
0
1
2
3
4
5
I
B
= 100mA
I
B
= 70
0m
A
I
B
= 600m
A
I
B
= 500m
A
I
B
= 400m
A
I
B
= 300m
A
I
B
= 200m
A
I
C
[A
],
CO
L
L
E
C
T
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
1
10
100
V
CE
= 5V
h
FE
, DC CU
RRENT
GAIN
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 5 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
1
10
100
1000
f = 1MHz
I
E
= 0
C
ob
[
p
F
]
,
CAPACI
T
A
N
CE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
0.01
0.1
1
10
t
F
t
ON
t
STG
t
ON
, t
ST
G
, t
F
[
µ
s], T
I
M
E
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
10
0
µ
s
10
m
s
50
µ
s
1m
s
DC
Pulse
I
C
[
A
]
,
CO
LLE
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
©2000 Fairchild Semiconductor International
KSC532
1
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
10
100
1000
10000
0.01
0.1
1
10
100
I
B2
= -1A
L = 200
µ
H
I
C
[
A
]
,
CO
LLE
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
P
C
[
W
]
,
PO
WER D
I
SSI
PA
TI
O
N
T
C
[
o
C], CASE TEMPERATURE
4.50
±
0.20
9.90
±
0.20
1.52
±
0.10
0.80
±
0.10
2.40
±
0.20
10.00
±
0.20
1.27
±
0.10
ø3.60
±
0.10
(8.70)
2.80
±
0.10
15.90
±
0.20
10.08
±
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
°
)
9.20
±
0.20
13.08
±
0.20
1.30
±
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
±
0.20
]
2.54TYP
[2.54
±
0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC532
1
Dimensions in Millimeters
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