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Part Number KSC5086

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC508
6
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current (DC)
7
A
I
CP
Collector Current (Pulse)
16
A
P
C
Collector Dissipation (T
C
=25
°
C)
50
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CES
Collector Cut-off Current (V
BE
=0)
V
CE
= 1400V, R
BE
= 0
1
mA
I
CBO
Collector Cu-toff Current
V
CB
=800V, I
E
=0
10
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 4V, I
C
= 0
40
200
mA
V
EBO
Base-Emitter Breakdown Voltage
I
E
= 250mA, I
C
= 0
6
V
h
FE
DC Current Gain
V
CE
= 5V, I
C
= 1.0A
8
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A, I
B
= 1.2A
5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 5A, I
B
= 1.2A
1.5
V
V
F
Damper Diode Turn On Voltage
I
F
= 6A
2
V
t
F
Fall Time
V
CC
= 200V, I
C
= 4A
I
B1
= 0.8A, I
B2
= -1.6A
R
L
= 50
0.2
µ
s
KSC5086
HIgh Definition Color Display Horizontal
Deflection Output
(Damper Diode Built In)
· High Collector-Base Voltage : BV
CBO
=1500V
· High Speed Switching : t
F
=0.1
µ
s (Typ.)
C
B
E
50
typ.
Equivalent Circuit
TO-3PF
1.Base 2.Collector 3.Emitter
1
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©2000 Fairchild Semiconductor International
KSC508
6
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Switching Time
Figure 6. Safe Operating Area
0
2
4
6
8
10
0
2
4
6
8
10
I
B
= 2A
I
B
= 1.8A
I
B
= 1.6A
I
B
= 1.4A
I
B
= 1.2A
I
B
= 1A
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
I
B
= 200mA
I
B
= 0A
I
C
[
A
]
,
CO
L
L
E
CT
OR
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
1
10
100
5
20
V
CE
= 5V
h
FE
, DC CU
RRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
/I
B
=3
I
C
/I
B
=5
V
CE
(
s
a
t
)
[
V]
,
SA
TURATI
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
2
3
4
5
6
7
8
9
10
V
CE
= 5V
I
C
[
A
]
,
CO
L
L
ECT
O
R CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-0.1
-1
-10
0.1
1
10
RESISTIVE LOAD
V
CC
=200V
I
C
=4A
I
B1
=0.8A
t
f
t
stg
t
st
g
(
µ
s
)
,
S
T
O
R
AG
E
TI
M
E
t
f
(
µ
s), F
A
L
L

T
I
M
E
I
B2
[A], BASE CURRENT
1
10
100
1000
10000
0.01
0.1
1
10
100
10
m
s
1m
s
30
0
µ
s
DC
10
0
µ
s
SINGLE PULSE
T
C
=25
O
C
I
C
[
A
]
,
CO
LLE
CT
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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©2000 Fairchild Semiconductor International
KSC508
6
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 1. Reverse Bias Safe Operating Area
Figure 2. Power Derating
10
100
1000
10000
0.1
1
10
100
I
C
=5I
B1
= 5I
B2
L=500
µ
H
SINGLE PULSE
I
B2
=-1A
CONSTANT
I
C
[
A
], CO
L
L
E
C
T
O
R CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
60
70
80
P
C
[W
], PO
W
E
R
D
I
SS
I
P
AT
IO
N
T
C
[
o
C], TEMPERATURE
background image
15.50
±
0.20
ø3.60
±
0.20
26.50
±
0.20
4.50
±
0.20
10.00
±
0.20
16.50
±
0.20
10
°
16.50
±
0.20
22.00
±
0.20
23.00
±
0.20
1.50
±
0.20
14.50
±
0.20
2.00
±
0.20
2.00
±
0.20
2.00
±
0.20
0.85
±
0.03
2.00
±
0.20
5.50
±
0.20
3.00
±
0.20
(1.50)
3.30
±
0.20
2.00
±
0.20
4.00
±
0.20
2.50
±
0.20
14.80
±
0.20
3.30
±
0.20
2.00
±
0.20
5.50
±
0.20
0.75
+0.20
­0.10
0.90
+0.20
­0.10
5.45TYP
[5.45
±
0.30
]
5.45TYP
[5.45
±
0.30
]
TO-3PF
Package Demensions
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC508
6
Dimensions in Millimeters
background image
©2000 Fairchild Semiconductor International
Rev. E
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PowerTrench
®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.