©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB907
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 60
V
V
CEO
Collector-Emitter Voltage
- 40
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current(DC)
- 3
A
I
B
Base Current
- 0.3
A
P
C
Collector Dissipation (T
a
=25
°
C)
15
W
P
C
Collector Dissipation (T
C
=25
°
C)
1
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector- Emitter Breakdown Voltage
I
C
= - 25mA, I
B
= 0
- 40
V
I
CBO
Collector Cut-off Current
V
CB
= - 60V, I
E
= 0
- 20
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 2.5
µ
A
h
FE1
h
FE2
DC Current Gain
V
CE
= - 2V, I
C
= - 1A
V
CE
= - 2V, I
C
= - 3A
2000
1000
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 4mA
- 1.5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 4mA
- 2
V
t
ON
Turn ON Time
V
CC
= - 30V, I
C
= - 3A
I
B1
= - I
B2
= - 6mA
R
L
= 10
0.3
µ
s
t
STG
Storage Time
0.6
µ
s
t
F
Fall Time
0.25
µ
s
KSB907
Power Amplifier Applications
· High DC Current Gain
· Low Collector-Emitter Saturation Voltage
· Built-in Damper Diode at E-C
· Darlington TR
· Complement to KSD1222
1. Base 2. Collector 3. Emitter
I-PACK
1
©2000 Fairchild Semiconductor International
KSB907
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Safe Operating Area
Figure 6. Power Derating
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
I
B
=0
I
B
=-175uA
I
B
=-200uA
I
B
=-225uA
I
B
=-250uA
I
B
=-275uA
I
B
=-300uA
I
C
(
A
)
,
COL
L
ECT
O
R
CURRENT
V
CE
(V), COLLECTOR EMITTER VOLTAGE
-0.1
-1
-10
100
1000
10000
V
CE
=-2V
h
FE
, DC
CURRE
NT
G
A
I
N
I
C
(A), COLLECTOR CURRENT
-0.1
-1
-10
-0.1
-1
-10
I
C
=500I
B
V
BE(SAT)
V
CE(SAT)
V
B
E
(SAT
)
, V
C
E
(SAT
)
(
V
)
,
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
(A), COLLECTOR CURRENT
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
CE
=-2V
I
C
(
A
)
,
COL
L
ECT
O
R
CURRENT
V
BE
(V), BASE EMITTER VOLTAGE
-1
-10
-100
-0.01
-0.1
-1
-10
1m
s
10
ms
DC
I
C
MAX. (DC)
I
C
MAX (PULSE)
I
C
(
A
)
,
CO
L
L
E
CT
OR
CURRENT
V
CE
(V), COLLECTOR EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
20
P
D
(
W
)
,
PO
WER
DI
SSI
PAT
I
O
N
T
C
(
) CASE TEMPERATURE
©2000 Fairchild Semiconductor International
Rev. E
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