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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP61N20 Rev. A
FDP
6
1
N
20
20
0V
N-Cha
nne
l
M
O
S
F
E
T
September 2005
UniFET
TM
FDP61N20
200V N-Channel MOSFET
Features
· 61A, 200V, R
DS(on)
= 0.041
@V
GS
= 10 V
· Low gate charge ( typical 58 nC)
· Low C
rss
( typical 80 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
S
D
G
TO-220
FCP Series
G
S
D
Symbol
Parameter
FDP61N20
Unit
V
DSS
Drain-Source Voltage
200
V
I
D
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
61
38.5
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
244
A
V
GSS
Gate-Source voltage
±
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1440
mJ
I
AR
Avalanche Current
(Note 1)
61
A
E
AR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
417
3.3
W
W/
°
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
°
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
JC
Thermal Resistance, Junction-to-Case
--
0.3
°
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
2
www.fairchildsemi.com
FDP61N20 Rev. A
FDP
6
1
N
20
20
0V
N-Cha
nne
l
M
O
S
F
E
T
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.58mH, I
AS
= 61A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
61A, di/dt
200A/
µ
s, V
DD
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
300
µ
s, Duty Cycle
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP61N20
FDP61N20
TO-220
-
-
50
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
µ
A
200
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
--
0.2
--
V/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, T
C
= 125
°
C
--
--
--
--
1
10
µ
A
µ
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 30.5A
--
0.034
0.041
g
FS
Forward Transconductance
V
DS
= 40V, I
D
=30.5A
(Note 4)
--
44.5
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
2615
3380
pF
C
oss
Output Capacitance
--
645
840
pF
C
rss
Reverse Transfer Capacitance
--
80
120
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 100V, I
D
= 61A
R
G
= 25
(Note 4, 5)
--
40
90
ns
t
r
Turn-On Rise Time
--
215
440
ns
t
d(off)
Turn-Off Delay Time
--
125
260
ns
t
f
Turn-Off Fall Time
--
170
350
ns
Q
g
Total Gate Charge
V
DS
= 160V, I
D
= 61A
V
GS
= 10V
(Note 4, 5)
--
58
75
nC
Q
gs
Gate-Source Charge
--
19
--
nC
Q
gd
Gate-Drain Charge
--
24
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
61
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
244
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 61A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 61A
dI
F
/dt =100A/
µ
s
(Note 4)
--
162
--
ns
Q
rr
Reverse Recovery Charge
--
1.5
--
µ
C
3
www.fairchildsemi.com
FDP61N20 Rev. A
FDP
6
1
N
20
20
0V
N-Cha
nne
l
M
O
S
F
E
T
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
? Notes :
1. 250
Pulse Test
2. T
C
= 25?
I
D
, D
r
a
i
n
C
u
rr
e
n
t [A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
? Notes :
1. V
DS
= 40V
2. 250
Pulse Test
I
D
,
D
r
ai
n
Cu
r
r
e
nt
[
A
]
V
GS
, Gate-Source Voltage [V]
0
25
50
75
100
125
150
0.02
0.03
0.04
0.05
0.06
V
GS
= 20V
V
GS
= 10V
? Note : T
J
= 25
R
DS
(
O
N)
[
O
]
,
D
r
ai
n-
S
o
ur
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
10
0
10
1
10
2
150?
? Notes :
1. V
GS
= 0V
2. 250
Pulse Test
25?
I
DR
,
R
e
v
e
r
s
e
D
r
ai
n
C
u
r
r
e
n
t
[
A
]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
2000
4000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
? Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pa
ci
t
a
nc
es
[
p
F
]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 100V
V
DS
= 40V
V
DS
= 160V
? Note : I
D
= 61A
V
GS
, G
a
te
-S
o
u
rc
e
V
o
l
t
a
g
e
[V
]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FDP61N20 Rev. A
FDP
6
1
N
20
20
0V
N-Cha
nne
l
M
O
S
F
E
T
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
BV
DSS
,
(
N
o
r
ma
liz
e
d
)
Dr
a
i
n-
S
o
ur
c
e
B
r
ea
k
d
own V
o
l
t
a
g
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
? Notes :
1. V
GS
= 10 V
2. I
D
= 30.5 A
R
DS
(
O
N)
,
(N
or
m
a
l
i
z
ed)
Dr
ai
n-
Sou
r
ce
On
-Re
s
i
s
t
a
nc
e
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 ms
1 ms
10
µ
s
DC
10 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
? Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Dra
i
n
Cu
r
r
e
n
t [A]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
10
20
30
40
50
60
70
I
D
,
D
r
ai
n Cu
r
r
e
nt
[
A
]
T
C
, Case Temperature [? ]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
? N o te s :
1 . Z
? J C
( t) = 0 .3 ? /W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
? J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
?J
C
(t
),
T
h
e
r
m
a
l R
e
s
p
o
n
se
t
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
t
1
P
DM
t
2
5
www.fairchildsemi.com
FDP61N20 Rev. A
FDP
6
1
N
20
20
0V
N-Cha
nne
l
M
O
S
F
E
T
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP61N20 Rev. A
FDP
6
1
N
20
20
0V
N-Cha
nne
l
M
O
S
F
E
T
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
· dv/dt controlled by R
G
· I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
· dv/dt controlled by R
G
· I
SD
controlled by pulse period
V
DD
L
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
7
www.fairchildsemi.com
FDP61N20 Rev. A
FDP
6
1
N
20
20
0V
N-Cha
nne
l
M
O
S
F
E
T
Mechanical Dimensions
Dimensions in Millimeters
TO-220
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
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OCXTM
OCXProTM
OPTOLOGIC
®
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POPTM
Power247TM
PowerEdgeTM
FAST
®
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
Rev. I16
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
PowerSaverTM
PowerTrench
®
QFET
®
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
®
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
®
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
®
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
®
Programmable Active DroopTM
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