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Part Number FDC658AP

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January 2006
FDC658AP Single P-Channel
Logic Level PowerTrench
®
MO
SFE
T
©2006 Fairchild Semiconductor Corporation
FDC658AP Rev. B (W)
www.fairchildsemi.com
1
FDC658AP
Single P-Channel Logic Level PowerTrench
®
MOSFET
-30V, -4A, 50m
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
Battery management
Load switch
Battery protection
DC/DC conversion
Features
Max r
DS(on)
= 50 m
@ V
GS
= -10 V, I
D
= -4A
Max r
DS(on)
= 75 m
@ V
GS
= -4.5 V, I
D
= -3.4A
Low Gate Charge
High performance trench technology for extremely low
r
DS(on)
RoHS Compliant
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DS
Drain-Source Voltage
-30
V
V
GS
Gate-Source Voltage
±25
V
I
D
Drain Current - Continuous
-4
A
-20
P
D
Maximum Power dissipation
1.6
W
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
R
JA
Thermal Resistance, Junction-to-Ambient
78
°C/W
R
JC
Thermal Resistance, Junction-to-Case
30
°C/W
Device Marking
Device
Reel Size
Tape Width
Quantity
.58A
FDC658AP
7inch
8mm
3000 units
PIN 1
SuperSOT
TM
-6
S
D
D
G
D
D
5
1
6
2
3
4
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
- Pulsed
FDC658AP Single P-Channel
Logic Level PowerTrench
®
MO
SFE
T
FDC658AP Rev. B (W)
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
D
= -250
µA, V
GS
= 0V
-30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
µA,
Referenced to 25°C
-22
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V, V
DS
= -24V
-1
µA
I
GSS
Gate-Body Leakage
V
GS
=
±25V, V
DS
= 0V
±100
nA
On Characteristics
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
µA
-1
-1.8
-3
V
V
GS(TH)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
µA,
Referenced to 25°C
4
mV/°C
r
DS(on)
Static Drain-Source On-Resistance
I
D
= -4A, V
GS
= -10V
44
50
m
I
D
= -3.4A, V
GS
= -4.5V
67
75
I
D
= -4A, V
GS
= -10V,
T
J
= 125°C
60
70
I
D(ON)
On-State Drain Current
V
GS
= -10V, V
DS
= -5V
-20
A
g
FS
Forward Transconductance
I
D
= -4A, V
DS
= -5V
8.4
S
(Note 2)
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
470
pF
C
oss
Output Capacitance
126
pF
C
rss
Reverse Transfer Capacitance
61
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
V
DD
= -15V, I
D
= -1A
V
GS
= -10V, R
GEN
= 6
7
14
ns
t
r
Turn-On Rise Time
12
22
ns
t
d(off)
Turn-Off Delay Time
16
29
ns
t
f
Turn-Off Fall Time
6
12
ns
Q
g
Total Gate Charge
V
DS
= -15V, I
D
= -4A,
V
GS
= -5V
6
8.1
nC
Q
gs
Gate-Source Charge
2.1
nC
Q
gd
Gate-Drain Charge
2
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= -1.3 A (Note 2)
-0.77
-1.2
V
Notes:
1: R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1: 1 on letter size paper
2: Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
a) 78
o
C/W when mounted on a
1 in
2
pad of 2 oz copper
b) 156
o
C/W whe mounted on a
minimum pad of 2 oz copper
FDC658AP Single P-Channel
Logic Level PowerTrench
®
MO
SFE
T
FDC658AP Rev. B (W)
www.fairchildsemi.com
3
Typical Characteristics
Figure 1.
0
5
10
15
20
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
,

DR
AI
N
CU
RR
E
N
T
(
A)
V
GS
= -10V
-3.5V
-3.0V
-4.5V
-4.0V
-5.0V
-6.0V
On-Region Characteristics
Figure 2.
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
-I
D
, DRAIN CURRENT (A)
NO
R
M
AL
I
Z
E
D
DRA
I
N
TO

SO
U
RCE
O
N
-
R
ES
I
S
TAN
C
E
V
GS
= -4.5V
-6.0V
-5.0V
-8.0V
-7.0V
-10V
Normalized On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
NO
RM
A
L
I
Z
E
D

D
R
A
I
N T
O
SO
URC
E ON
-
R
ES
I
S
T
ANC
E
I
D
= -4.0A
V
GS
= -10V
Normalized On-Resistance vs Junction
Temperature
Figure 4.
0.02
0.06
0.1
0.14
0.18
0.22
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
S
(
on)
,
DRAI
N T
O

SOURCE
O
N
RESI
ST
ANCE (
O
HM
)
I
D
= -2.0A
T
J
= 125
o
C
T
J
= 25
o
C
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
0
3
6
9
12
15
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
D
RAI
N
CURRE
NT
(
A)
T
J
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
REV
E
R
S
E
DRA
I
N
CU
RRE
N
T
(
A
)
V
GS
= 0V
T
J
= 125
o
C
25
o
C
-55
o
C
Source to Drain Diode Forward Voltage
vs Source Current
FDC658AP Single P-Channel
Logic Level PowerTrench
®
MO
SFE
T
FDC658AP Rev. B (W)
www.fairchildsemi.com
4
Figure 7.
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
-V
GS
,

G
AT
E
-
S
O
U
RCE V
O
L
T
AG
E
(
V
)
I
D
= -4A
V
DS
= -5V
-10V
-15V
Gate Charge Characteristics
Figure 8.
0
150
300
450
600
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
AC
I
T
A
NCE
(
p
F
)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Capacitance vs Drain to Source Voltage
Figure 9.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
,
D
RAI
N
CU
RR
E
NT
(
A)
DC
1s
100ms
100us
r
DS(on)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 156
o
C/W
T
A
= 25
o
C
10ms
1ms
Forward Bias Safe Operating Area
Figure 10.
0
2
4
6
8
10
0.01
0.1
1
10
100
t, PULSE WIDTH (s)
P(
p
k
)
,

PE
A
K
TR
A
N
SI
E
N
T P
O
W
E
R
(
W
)
SINGLE PULSE
R
JA
= 156°C/W
T
A
= 25°C
Single Pulse Maximum Power
Dissipation
Figure 11.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION
r(t
)
, N
O
RM
ALI
Z
ED
EF
FEC
T
I
V
E
TR
AN
SIEN
T T
HERM
AL
RESIST
ANC
E
R
JA
(t) = r(t) + R
JA
R
JA
= 156
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Typical Characteristics
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
Not In Production
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