EGP20A-EGP20K
EGP20A - EGP20K, Rev.
C
2001 Fairchild Semiconductor Corporation
EGP20A - EGP20K
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
DO-15
COLOR BAND DENOTES CATHODE
Features
·
Glass passivated cavity-free junction.
·
High surge current capability.
·
Low leakage current.
·
Superfast recovery time for high
efficiency.
·
Low forward voltage, high current
capability.
Thermal Characteristics
Symbol
Parameter
Device
Units
20A 20B 20C 20D 20F 20G 20J 20K
V
F
Forward Voltage @ 2.0 A
0.95
1.25
1.7
V
t
rr
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
50 75
ns
I
R
Reverse Current @ rated V
R
T
A
= 25
°
C
T
A
= 125
°
C
5.0
100
µ
A
µ
A
C
T
Total
Capacitance
V
R
= 4.0 V, f = 1.0 MHz
70 45
pF
Symbol
Parameter
Value
Units
20A 20B 20C 20D 20F 20G 20J 20K
V
RRM
Maximum
Repetitive
Reverse
Voltage 50
100
150
200
300
400
600
800
V
I
F(AV)
Average Rectified Forward Current,
.375 " lead length @ T
A
= 55
°
C
2.0 A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
75 A
T
stg
Storage Temperature Range
-65 to +150
°
C
T
J
Operating Junction Temperature
-65 to +150
°
C
Symbol
Parameter
Value
Units
P
D
Power
Dissipation
3.15
W
R
JA
Thermal Resistance, Junction to Ambient
40
°
C/W
R
JL
Thermal Resistance, Junction to Lead
15
°
C/W
EGP20A - EGP20K, Rev.
C
EGP20A-EGP20K
2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50
NONINDUCTIVE
50
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
0
25
50
75
100
125
150
175
0
1
2
3
Ambient Temperature [ºC]
Average Rectified Forward Current, I
F
[A]
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
1
2
5
10
20
50
100
0
15
30
45
60
75
90
Number of Cycles at 60Hz
Peak Forward Surge Current, I
FSM
[A]
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.01
0.1
1
10
50
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
Pulse Width = 300
µ
µ
µ
µ
s
2% Duty Cycle
T = 25 C
º
A
EGP20A-EGP20D
EGP20F-EGP20K
T = 150 C
º
A
0.1
1
10
100
1000
0
20
40
60
80
100
120
140
Reverse Voltage, V
R
[V]
Total Capacitance, C
T
[pF]
EGP20F-EGP20K
EGP20A-EGP20D
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, I
R
[mA]
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
T = 150 C
º
A
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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Definition
Advance Information
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No Identification Needed
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This datasheet contains the design specifications for
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any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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