April 1995

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

____________

___________________________________________________________________

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

BS170

MMBF170

Units

DSS

Drain-Source Voltage

DGR

Drain-Gate Voltage (R

< 1M

)

GSS

Gate-Source Voltage

± 20

Drain Current - Continuous

500

- Pulsed

1200

800

Maximum Power Dissipation

830

300

Derate Above 25°C

6.6

2.4

mW/°C

STG

Operating and Storage Temperature Range

-55 to 150

°C

Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds

300

°C

THERMAL CHARACTERISTICS
R

Thermal Resistacne, Junction-to-Ambient

150

417

°C/W

BS170 Rev. C / MMBF170 Rev. D

High density cell design for low R

DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Type

Min

Typ

Max

Units

OFF CHARACTERISTICS

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= 100 µA

All

DSS

Zero Gate Voltage Drain Current

= 25 V, V

= 0 V

All

0.5

µA

GSSF

Gate - Body Leakage, Forward

= 15 V, V

= 0 V

All

ON CHARACTERISTICS

(Note 1)

GS(th)

Gate Threshold Voltage

= V

, I

= 1 mA

All

0.8

2.1

DS(ON)

Static Drain-Source On-Resistance

= 10 V, I

= 200 mA

All

1.2

Forward Transconductance

= 10 V, I

= 200 mA

BS170

320

> 2 V

DS(on)

, I

= 200 mA

MMBF170

320

DYNAMIC CHARACTERISTICS
C

iss

Input Capacitance

= 10 V, V

= 0 V,

f = 1.0 MHz

All

oss

Output Capacitance

All

rss

Reverse Transfer Capacitance

All

SWITCHING CHARACTERISTICS

(Note 1)

Turn-On Time

= 25 V, I

= 200 m A,

= 10 V, R

GEN

= 25

BS170

= 25 V, I

= 500 mA,

= 10 V, R

GEN

= 50

MMBF170

off

Turn-Off Time

= 25 V, I

= 200 m A,

= 10 V, R

GEN

= 25

BS170

= 25 V, I

= 500 mA,

= 10 V, R

GEN

= 50

MMBF170

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

BS170 Rev. C / MMBF170 Rev. D

BS170 Rev. C / MMBF170 Rev. D

0.5

1.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

9.0

4.0

8.0

3.0

7.0

V = 10V

5.0

6.0

-50

-25

100

125

150

0.5

0.75

1.25

1.5

1.75

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(ON)

V = 10V

I = 5 0 0 m A

-50

-25

100

125

150

0.8

0.85

0.9

0.95

1.05

1.1

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

I = 1 mA

V = V

V , NORMALIZED

0.4

0.8

1.2

1.6

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V =4.0V

R , NORMALIZED

DS(on)

7.0

4.5

5.0

6 .0

9.0

8.0

0.4

0.8

1.2

1.6

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

25°C

-55°C

V = 10V

R , NORMALIZED

DS(on)

Typical Electrical Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate Voltage

and Drain Current.

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 5. Transfer Characteristics.

Figure 6. Gate Threshold Variation with

Temperature

1 0

0.4

0.8

1.2

1.6

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 10V

T = -55°C

25°C

125°C

BS170 / MMBF170

BS170 Rev. C / MMBF170 Rev. D

-50

-25

100

125

150

0.925

0.95

0.975

1.025

1.05

1.075

1.1

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

BV , NORMALIZED

DSS

I = 100µA

0.2

0.4

0.6

0.8

1.2

1.4

0.001

0.005

0.01

0.05

0.1

0.5

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

V = 0V

T = 125°C

25°C

-55°C

0.4

0.8

1.2

1.6

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

I =500mA

V = 25V

1 0

2 0

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C iss

f = 1 MHz
V = 0V

C oss

C rss

OUT

DUT

GEN

10%

50%

90%

10%

90%

50%

Input, Vin

Output, Vout

off

d(off)

d(on)

Inverted

10%

Pulse Width

Figure 7. Breakdown Voltage Variation

with Temperature

Figure 8. Body Diode Forward Voltage Variation with

Current and Temperature.

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

Typical Electrical Characteristics

(continued)

BS170 / MMBF170

BS170 Rev. C / MMBF170 Rev. D

0.0001

0.001

0.01

0.1

100

300

0.001

0.002

0.01

0.05

0.1

0.2

0.5

t , TIME (sec)

I
E

I
S

T
A

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

R (t) = r(t) * R

R = (See Datasheet)

T - T = P * R (t)

P(pk)

0.0001

0.001

0.01

0.1

100

300

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

I
E

I
S

T
A

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

R (t) = r(t) * R

R = (See Datasheet)

T - T = P * R (t)

P(pk)

1 0

2 0

3 0

6 0 8 0

0.005

0.01

0.05

0.1

0.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 10V

SINGLE PULSE

T = 25°C

RDS(ON) Limit

100ms

1ms

10ms

100us

10s

Figure 15. TO-92, BS170 Transient Thermal Response Curve.

Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve

1 0

2 0

3 0

6 0 8 0

0.005

0.01

0.05

0.1

0.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 10V

SINGLE PULSE

T = 25°C

RDS(ON) Limit

100ms

1ms

10ms

10s

100us

Figure 13. BS170 Maximum

Safe Operating Area

Figure 14. MMBF170 Maximum

Safe Operating Area

Typical Electrical Characteristics

(continued)

Part Number BS170