BCX79
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
BCX79
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 68. See PN200A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
45
V
V
CES
Collector-Base Voltage
45
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Symbol
Characteristic
Max
Units
BCX79
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
mW
mW/
°
C
R
JC
Thermal Resistance, Junction to Case
83.3
°
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
°
C/W
E
B
C
TO-92
©
1997 Fairchild Semiconductor Corporation
BCX79
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
45
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0
µ
A, I
C
= 0
5.0
V
I
CEX
Collector Cutoff Current
V
CE
= 45 V, V
BE
= 0.2 V,
T
A
= +100
°
C
20
µ
A
I
CES
Collector Cutoff Current
V
CE
= 45 V, I
E
= 0,
V
CE
= 45 V, I
E
= 0, T
A
= +125
°
C
10
2.5
nA
µ
A
I
EBO
Emitter Cutoff Current
V
EB
= 4.0 V, I
C
= 0
20
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 100 mA
120
80
40
630
1,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 2.5 mA
0.6
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 2.5 mA
1.0
V
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 5.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 100 mA
0.6
0.7
0.9
V
V
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance
V
CB
= 10 V, f = 1.0 MHz
4.5
pF
C
eb
Emitter-Base Capacitance
V
EB
= 0.5 V, f = 1.0 MHz
15
pF
h
ie
Input Impedance
I
C
= 2.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
1.6
8.5
k
h
oe
Output Admittance
I
C
= 2.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
100
µ
mhos
NF
Noise Figure
V
CE
= 5.0 V, I
C
= 0.2 mA,
R
S
= 2.0 k
, f = 1.0 kHz
6.0
dB
SWITCHING CHARACTERISTICS
t
on
Turn-on Time
V
CC
= 10 V, I
C
= 10 mA,
V
BB
= 3.6 V, I
B1
= I
B2
= 1.0 mA
150
ns
t
on
Turn-on Time
V
CC
= 10 V, I
C
= 100 mA,
V
BB
= 5.0 V, I
B1
= I
B2
= 10 mA
150
ns
t
off
Turn-off Time
V
CC
= 10 V, I
C
= 10 mA,
V
BB
= 3.6 V, I
B1
= I
B2
= 1.0 mA
800
ns
t
off
Turn-off Time
V
CC
= 10 V, I
C
= 100 mA,
V
BB
= 5.0 V, I
B1
= I
B2
= 10 mA
800
ns
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