4
C1
B2
E2
E1
B1
C2
pin #1
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
45
V
V
CES
Collector-Base Voltage
50
V
V
CBO
Collector-Base Voltage
50
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
2001 Fairchild Semiconductor Corporation Rev.A1
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
Thermal Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BC847S
P
D
Total Device Dissipation
Derate above 25
°
C
300
2.4
mW
mW/
°
C
R
JA
Thermal Resistance, Junction to Ambient
415
°
C/W
BC847S
SC70-6
Mark: 1C
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
BC847S
BC847S
Electrical Characteristics
T
A
= 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
45
V
V
(BR)CES
Collector-Base Breakdown Voltage
I
C
= 10
µ
A, I
E
= 0
50
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
µ
A, I
E
= 0
50
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
6.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 150°C
15
5.0
nA
µ
A
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 2.0 mA, V
CE
= 5.0 V
110
630
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
0.25
0.65
V
V
V
BE(
on
)
Base-Emitter ON Voltage I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
0.58
0.7
0.77
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 5.0,
f = 100 mHz
200
MHz
C
obo
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
2.0
pF
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TT
ER
V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
25 °C
- 40 °C
125 °C
= 10
Typical Pulsed Current Gain
vs Collector Current
0.01
0.03
0.1
0.3
1
3
10
30
100
0
200
400
600
800
1000
1200
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L PUL
SED C
U
R
R
E
N
T
G
A
I
N
C
FE
125 °C
25 °C
- 40 °C
V = 5.0 V
CE
4
Typical Characteristics
Input and Output Capacitance
vs Reverse Bias Voltage
0
4
8
12
16
20
0
1
2
3
4
5
REVERSE BIAS VOLTAGE (V)
CAP
AC
I
T
A
N
CE (
p
F
)
f = 1.0 MHz
C ob
C te
Contours of Constant Gain
Bandwidth Product (f )
0.1
1
10
100
1
2
3
5
7
10
I - COLLECTOR CURRENT (mA)
V
-
CO
L
L
E
C
T
O
R
VO
L
T
A
G
E
(
V
)
C
175 MHz
T
CE
150 MHz
125 MHz
75 MHz
100 MHz
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLEC
T
O
R
-
E
M
I
TT
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
= 10
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
40
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
MI
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5.0 V
CE
25 °C
- 40 °C
125 °C
Collect or-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
LL
E
C
TO
R
C
U
R
R
E
N
T (
n
A
)
A
CBO
V = 45V
°
CB
Normalized Collect or-Cutoff Curre nt
vs Ambient Temperature
25
50
75
100
125
150
1
10
100
1000
T - AMBIE NT TEMP ERATURE ( C)
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
R
E
L
A
T
I
VE
T
O
VA
L
U
E A
T
T
=
2
5
C
A
A
°
°
BC847S
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
NPN Multi-Chip General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
100
200
300
400
500
TEMPERATURE ( C)
P
-
POW
E
R
DI
S
S
I
P
A
T
I
O
N (
m
W
)
º
D
SC70-6
Wideband Noise Frequency
vs Source Resistance
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0
1
2
3
4
5
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
V = 5.0 V
BANDWIDTH = 15.7 kHz
CE
I = 10
µ
A
C
I = 100
µ
A
C
S
I = 30
µ
A
C
BC847S
Noise Figure vs Frequency
0.0001
0.001
0.01
0.1
1
10
100
0
2
4
6
8
10
f - FREQUENCY (MHz)
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
V = 5.0V
CE
I = 200
µ
A,
R = 10 k
C
S
I = 1.0 mA,
R = 500
C
S
I = 100
µ
A,
R = 10 k
C
S
I = 1.0 mA,
R = 5.0 k
C
S
©2001 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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