Excelics
EPA1200A
DATA SHEET
High Efficiency Heterojunction Power FET
·
+39.5dBm TYPICAL OUTPUT POWER
·
18.0dB TYPICAL POWER GAIN AT 2GHz
·
0.4 X 12,000 MICRON RECESSED
"MUSHROOM" GATE
·
Si
3
N
4
PASSIVATION
·
ADVANCED EPITAXIAL
HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
·
Idss SORTED IN 300mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
38.0 39.5
39.5
dBm
G
1dB
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
16.5 18.0
13.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=2GHz
43
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
2200
3600
4700
mA
Gm
Transconductance Vds=3V, Vgs=0V
2400
3800
mS
Vp
Pinch-off Voltage Vds=3V, Ids=36mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=12mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=12mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
4
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
3.5A
Igsf
Forward Gate Current
600mA
100mA
Pin
Input Power
37dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
34 W
28 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 50
±
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
'
'
'
'
'
*
*
*
*
*
6
6
6
6
6
6
EPA1200A
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.966 -161.3 7.649 95.5 0.011 16.3 0.675 -175.7
1.000 0.966 -171.3 3.849 86.9 0.012 18.6 0.683 -176.9
1.500 0.966 -175.0 2.555 81.4 0.012 23.8 0.690 -177.0
2.000 0.966 -177.1 1.901 76.8 0.012 29.7 0.698 -176.9
2.500 0.967 -178.5 1.505 72.7 0.013 35.7 0.707 -176.8
3.000 0.967 -179.6 1.239 68.7 0.014 41.4 0.718 -176.8
3.500 0.968 179.4 1.047 65.1 0.015 46.7 0.729 -176.8
4.000 0.969 178.6 0.902 61.6 0.016 51.5 0.742 -177.1
4.500 0.969 177.8 0.788 58.3 0.017 55.6 0.754 -177.4
5.000 0.970 177.1 0.697 55.2 0.019 59.2 0.767 -177.8
5.500 0.971 176.4 0.622 52.2 0.020 62.2 0.779 -178.4
6.000 0.971 175.7 0.559 49.5 0.022 64.6 0.791 -179.0
6.500 0.972 175.0 0.506 46.9 0.024 66.6 0.803 -179.7
7.000 0.973 174.4 0.461 44.6 0.026 68.2 0.814 179.5
7.500 0.973 173.8 0.422 42.4 0.028 69.4 0.825 178.7
8.000 0.974 173.2 0.388 40.4 0.030 70.4 0.835 177.8
8.500 0.974 172.6 0.358 38.6 0.032 71.1 0.845 176.9
9.000 0.975 172.0 0.332 36.9 0.035 71.6 0.854 175.9
9.500 0.975 171.4 0.309 35.4 0.037 71.9 0.862 175.0
10.000 0.976 170.8 0.288 34.1 0.039 72.1 0.870 174.0
Note: The data included 0.7 mils diameter Au bonding wires:
5 gate wires, 20 mils each; 5 drain wires, 12 mils each; 12 source wires, 7 mils each.
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