EID0910-12
UPDATED
06/14/2005
9.50-10.50 GHz 12-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2005
YYWW
.827±.010
.421
.004
.669
.105±.008
.168±.010
ALL DIMENSIONS IN INCHES
.125
.508±.008
.442
SN
.004
.063
.024
.120 MIN
Excelics
.120 MIN
FEATURES
·
9.50
10.50GHz
Bandwidth
·
Input/Output Impedance Matched to 50 Ohms
·
+41 dBm Output Power at 1dB Compression
·
8.0 dB Power Gain at 1dB Compression
·
28% Power Added Efficiency
·
-38 dBc IM3 at Po = 30.0 dBm SCL
·
Hermetic Metal Flange Package
·
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25
°
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
3200mA
40 41 dBm
G
1dB
Gain at 1dB Compression f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
3200mA
7.0 8.0 dB
G
Gain Flatness f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
3200mA
±0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3200mA f = 9.50-10.50GHz
28 %
Id
1dB
Drain Current at 1dB Compression f = 9.50-10.50GHz
3800
4300
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 30.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 10.50GHz
-33 -38
dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
6400
8000
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 64 mA
-1.2
-2.5
V
R
TH
Thermal Resistance
2
2.5
3.0
o
C/W
Note: 1) Tested with 50 Ohm gate resistor. 2) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-3.0 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
220 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
50 W
T
CH
Channel
Temperature
175°C
T
STG
Storage
Temperature -65/+175°C
Notes: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EID0910-12
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