EIC2832-2
UPDATED
02/14/2006
2.80-3.20 GHz 2-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2006
SYMBOL
PARAMETERS/TEST CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
550mA
32.5 33.5 dBm
G
1dB
Gain at 1dB Compression f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
550mA
11.0 12.0
dB
G
Gain Flatness f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
550mA
±0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
550mA f = 2.80-3.20GHz
35 %
Id
1dB
Drain Current at 1dB Compression f = 2.80-3.20GHz
600
700
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 3.20GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1000
1250
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 10 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
11
12
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
15
10V
Vgs
Gate-Source Voltage
-5
-4V
Igsf
Forward Gate Current
21.6mA
7.2mA
Igsr
Reserve Gate Current
-3.6mA
-1.2mA
Pin
Input Power
32.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
12.5W
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
YYWW
.827±.010
.421
.004
.669
.105±.008
.168±.010
ALL DIMENSIONS IN INCHES
.125
.508±.008
.442
SN
.004
.063
.024
.120 MIN
Excelics
.120 MIN
FEATURES
·
2.80
3.20GHz
Bandwidth
·
Input/Output Impedance Matched to 50 Ohms
·
+33.5 dBm Output Power at 1dB Compression
·
12.0 dB Power Gain at 1dB Compression
·
35% Power Added Efficiency
·
-46 dBc IM3 at PO = 22.5 dBm SCL
·
Hermetic Metal Flange Package
·
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25
°
C)
Caution! ESD sensitive device.
EIC2832-2
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