EIC1212-8
UPDATED
01/04/2006
12.20-12.70 GHz 8-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
YYWW
.827±.010
.421
.004
.669
.105±.008
.168±.010
ALL DIMENSIONS IN INCHES
.125
.508±.008
.442
SN
.004
.063
.024
.120 MIN
Excelics
.120 MIN
FEATURES
·
12.20 12.70GHz Bandwidth
·
Input/Output Impedance Matched to 50 Ohms
·
+39.0 dBm Output Power at 1dB Compression
·
6.5 dB Power Gain at 1dB Compression
·
27% Power Added Efficiency
·
-46 dBc IM3 at PO = 28.5 dBm SCL
·
Hermetic Metal Flange Package
·
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25
°
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 12.20-12.70GHz
V
DS
= 10 V, I
DSQ
2200mA
38.5 39.0 dBm
G
1dB
Gain at 1dB Compression f = 12.20-12.70GHz
V
DS
= 10 V, I
DSQ
2200mA
5.5 6.5 dB
G
Gain Flatness f = 12.20-12.70GHz
V
DS
= 10 V, I
DSQ
2200mA
±0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
2200mA f = 12.20-12.70GHz
27 %
Id
1dB
Drain Current at 1dB Compression f = 12.20-12.70GHz
2300
2600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 12.70GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
4000
5000
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 40 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
3.5
4.0
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
80 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
38 W
T
CH
Channel
Temperature
175°C
T
STG
Storage
Temperature -65/+175°C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
EIC1212-8
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