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Part Number P0120008P

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Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Features
4
1
2
3
4
1
2
3
· Up to 2.7 GHz frequency band
Web Site:
www.sei.co.jp/GaAsIC/
· Beyond +28 dBm output power
· Up to +43dBm Output IP3
· High Drain Efficiency
· 12dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
Applications
· Wireless communication system
· Cellular, PCS, PHS, W-CDMA, WLAN
Description
P0120008P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI's long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
Functional Diagram
Pin No.
Function
1 Input/Gate
2, 4
Ground
3 Output/Drain
Ordering Information
Part No
Description
Number
of devices
Container
P0120008P
GaAs Power FET
1000
7" Reel
KP028J
2.11-2.17GHz
Application Circuit
1
Anti-static
Bag
Absolute Maximum Ratings
(@Tc=25°C)
Parameter Symbol
Value Units
Drain-Source Voltage
Vds
10
V
Gate-Source Voltage
Vgs
- 4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin 20
(*)
dBm
Power Dissipation
Pt
2.77
W
Junction Temperature
Tj
150
(**)
°C
Storage Temperature
Tstg
- 40 to +150
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
(**) Recommended Tj under operation is below 125°C.
Electrical Specifications (@Tc=25°C)
Values
Parameter Symbol
Test
Conditions
Min. Typ. Max.
Units
Saturated Drain Current
Idss
Vds=3V, Vg=0V
---
---
760
mA
Transconductance gm
Vds=8V, Ids=300mA
250
---
---
mS
Pinchoff Voltage
Vp
Vds=8V, Ids=30mA
- 3.0
---
- 1.7
V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 30
µA
3.0 --- --- V
DC
Thermal Resistance
Rth
Channel-Case
---
--- 45
°C/W
Frequency f
2.7
GHz
Output Power
@ 1dB Gain Compression
P1dB
30
---
dBm
Small Signal Gain
G
12
---
dB
Output IP3
IP3
---
43
---
dBm
RF
Power Added Efficiency
add
Vds=8V
Ids=220mA
f=2.1GHz
---
53 --- %
-1-
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Typical Characteristics


















Vgs=0V
-2.0V
-1.5V
-1.0V
-0.5V
Vds (V)
1000
750
500
250
0 0
2
4
6
8
T
o
t
a
l P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Tc (°C)
3
4
2
1
0
0
50
100
150
200
D
r
ai
n
C
u
r
r
en
t
(
m
A
)
Transfer Curve
Power Derating Curve
0
2
4
6
8
0
2
4
6
8
T
o
t
a
l P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Tc (°C)
3
4
2
1
0
0
T
o
t
a
l P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Tc (°C)
3
4
2
1
0
0
50
100
150
200
D
r
ai
n
C
u
r
r
en
t
(
m
A
)
Transfer Curve
Power Derating Curve
Load-pull Characteristics (Typical Data)
Tc=25°C, Vds=8V, Ids=220mA, Common Source, Zo=50
(Calibrated to device leads)


0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-135
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
4.0
2.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sc
a
l
e
f
o
r

|
S
21
|
0
45
90
13
5
-180
-135
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
4.0
2.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sc
a
l
e
f
o
r

|
S
21
|

















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-2-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25°C, Vds=8V, Ids=180mA, Common Source, Zo=50
(Calibrated to device leads)

0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0.
4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0.
4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
135
-180
-1
35
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
4.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sca
l
e f
o
r
|
S
21|
0
45
90
135
-180
-1
35
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
4.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sca
l
e f
o
r
|
S
21|
Ids
Ids
=220mA Freq(GHz) S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.741
-157.9
5.797
77.8
0.047
35.3
0.151
-131.4
1.4
0.740
-168.8
5.052
69.4
0.050
33.3
0.160
-140.8
1.6
0.740
-178.1
4.480
61.7
0.053
31.2
0.173
-147.8
1.8
0.737
173.7
4.025
54.4
0.056
29.1
0.183
-152.5
2.0
0.734
165.7
3.666
47.3
0.059
26.8
0.190
-157.5
2.2
0.730
158.1
3.367
40.4
0.063
24.2
0.197
-160.7
2.4
0.730
150.5
3.120
33.5
0.067
21.1
0.195
-166.7
=180mA Freq(GHz) S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.741
-157.9
5.791
77.9
0.047
34.6
0.158
-137.1
1.4
0.739
-168.8
5.046
69.5
0.050
32.4
0.168
-146.2
1.6
0.738
-178.1
4.475
61.9
0.053
30.3
0.181
-152.8
1.8
0.736
173.7
4.022
54.6
0.056
28.1
0.190
-157.4
2.0
0.732
165.7
3.663
47.5
0.059
25.8
0.197
-162.2
2.2
0.728
158.1
3.364
40.7
0.063
23.2
0.203
-165.4
2.4
0.728
150.5
3.119
33.8
0.067
20.0
0.201
-171.5
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=220mA Ids=180mA
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
Bm
)
IP
3
(
d
Bm
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
Bm
)
IP
3
(
d
Bm
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
B
m
)
IP
3
(
d
Bm
)
IM3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
B
m
)
IP
3
(
d
Bm
)
IM3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
Device: P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=220mA
Source Matching: Mag 0.75 Ang -169.5°
Load Matching: Mag 0.36 Ang 175.9°
Device: P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=180mA
Source Matching: Mag 0.75 Ang -169.5°
Load Matching: Mag 0.32 Ang 144.6°



















[Note] P
out
and
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.




















Id=220mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-10.0
4.4
14.4
-68.1
-72.5
40.6
178.4
0.2
-5.0
9.5
14.5
-57.4
-66.8
42.9
173.4
0.6
0.0
14.5
14.5
-41.8
-56.3
42.7
165.8
2.0
5.0
19.5
14.5
-25.5
-45.0
41.8
162.8
6.6
10.0
24.5
14.5
-2.4
-26.8
37.4
170.3
19.8
15.0
29.3
14.3
13.8
-15.5
34.6
202.3
50.6
Id=180mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-10.0
4.4
14.4
-66.3
-70.7
39.9
164.9
0.2
-5.0
9.5
14.5
-56.0
-65.5
42.3
159.6
0.7
0.0
14.6
14.6
-41.4
-56.0
42.6
151.8
2.3
5.0
19.6
14.6
-23.7
-43.3
41.3
147.5
7.5
10.0
24.6
14.6
0.8
-23.8
36.0
156.1
22.2
15.0
29.3
14.3
13.6
-15.7
34.6
189.3
53.6
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC

Tc=25°C, Vds=8V, Ids=220mA, Pin=0d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.55
130.6
Source : 0.75
-169.5
Pout max : 14.9d Bm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.36
175.9
Source : 0.75
-169.5
IP3 max : 41.5d Bm
Tc=25°C, Vds=8V, Ids=180mA, Pin=0d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.55
133.1
Source : 0.75
-169.5
Pout max : 15.0d Bm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.32
144.6
Source : 0.75
-169.5
IP3 max : 41.0d Bm
+j25
+j50
+j100
100
50
25
-j25
-j50
-j100
13.65
14.9
+j100
100
+j50
+j25
25
50
-j25
-j50
-j100
13.75
15.0
+j25
+j50
+j100
100
50
25
-j25
-j50
-j100
41.0
38.5
100
-j100
-j50
-j25
+j25
+j50
+j100
41.5
40.25
25
50