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Part Number P0120002P

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Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Features
Web Site:
www.sei.co.jp/GaAsIC/
· Up to 2.7 GHz frequency band
· Beyond +22 dBm output power
· Up to +41dBm Output IP3
· High Drain Efficiency
· 15dB Gain at 2.1GHz
· SOT-89 SMT Package (Pb-free)
· Low Noise Figure
Applications
· Wireless communication system
· Cellular, PCS, PHS, W-CDMA, WLAN
Description
P0120002P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI's long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
Functional Diagram
4
1
2
3
Pin No.
Function
1 Input/Gate
2, 4
Ground
3 Output/Drain
Ordering Information
Part No
Description
Number
of devices
Container
P0120002P
GaAs Power FET
1000
7" Reel
KP022J
2.11-2.17GHz
Application Circuit
1
Anti-static
Bag
Absolute Maximum Ratings
(@Tc=25°C)
Parameter Symbol
Value Units
Drain-Source Voltage
Vds
8
V
Gate-Source Voltage
Vgs
- 4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin 13
(*)
dBm
Power Dissipation
Pt
1.7
W
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
- 40 to +125
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
Electrical Specifications (@Tc=25°C)
Values
Parameter Symbol
Test
Conditions
Min. Typ. Max.
Units
Saturated Drain Current
Idss
Vds=3V, Vg=0V
---
---
300
mA
Transconductance gm
Vds=6V, Ids=100mA
90
---
---
mS
Pinchoff Voltage
Vp
Vds=6V, Ids=10mA
- 3.0
---
- 1.7
V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 10
µA
3.0 --- --- V
DC
Thermal Resistance
Rth
Channel-Case
---
--- 60
°C/W
Frequency f
2.7
GHz
Output Power
@ 1dB Gain Compression
P1dB ---
24
---
dBm
Small Signal Gain
G
---
15
---
dB
Output IP3
IP3
---
41
---
dBm
RF
Power Added Efficiency
add
Vds=6V
Ids=80mA
f=2.1GHz
---
50 --- %
-1-
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Typical Characteristics
Power Derating Curve
Transfer Curve
Power Derating Curve
Transfer Curve
3
2
1
0
0
50
100
150
200
Tc (°C)
Dr
a
i
n
C
u
r
r
e
n
t

(
m
A)
400
300
200
100
0
0
2
4
6
Vds (V)
Vgs=0V
-0.5V
-1.0V
-1.5V
-2.0V
T
o
ta
l
P
o
w
e
r

D
i
s
p
a
tion
(
W
)
S-parameters (Typical Data)
Tc=25°C, Vds=6V, Ids=100mA, Common Source, Zo=50
(Calibrated to device leads)


0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
S
c
al
e f
o
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-1
35
-9
0
-4
5
S12
0.02
0.04
0.06
0
0
2.0
4.0
6.0
S
c
al
e f
o
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-1
35
-9
0
-4
5
S12
0.02
0.04
0.06
0
0
2.0
4.0
6.0
















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-2-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25°C, Vds=6V, Ids=80mA, Common Source, Zo=50
(Calibrated to device leads)

0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-13
5
-9
0
-45
Sc
a
l
e
fo
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
S12
0.02
0.04
0.06
0
2.0
4.0
6.0
0
0
45
90
13
5
-180
-13
5
-9
0
-45
Sc
a
l
e
fo
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
S12
0.02
0.04
0.06
0
2.0
4.0
6.0
0
Ids=100mA Freq(GHz) S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.861
-102.8
6.088
107.4
0.037
37.7
0.463
-40.9
1.4
0.842
-117.4
5.659
97.5
0.039
31.5
0.442
-45.9
1.6
0.830
-130.3
5.264
88.5
0.041
25.8
0.423
-50.0
1.8
0.820
-141.7
4.892
80.2
0.043
20.7
0.412
-53.4
2.0
0.810
-152.1
4.592
72.4
0.044
16.2
0.398
-58.1
2.2
0.801
-161.6
4.350
64.8
0.046
11.5
0.380
-62.1
2.4
0.789
-171.1
4.139
57.3
0.048
6.4
0.360
-66.0
Ids=80mA
Freq(GHz) S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.861
-102.2
6.066
107.7
0.039
37.2
0.462
-41.9
1.4
0.843
-116.7
5.645
97.8
0.042
30.5
0.440
-47.0
1.6
0.830
-129.6
5.256
88.7
0.044
24.7
0.419
-51.2
1.8
0.820
-141.1
4.885
80.4
0.046
19.5
0.407
-54.7
2.0
0.809
-151.5
4.589
72.6
0.047
14.7
0.392
-59.4
2.2
0.800
-161.0
4.347
65.0
0.049
9.9
0.374
-63.3
2.4
0.788
-170.5
4.138
57.6
0.051
4.8
0.352
-67.2
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=100mA Ids=80mA
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=100mA
Source Matching: Mag 0.71 Ang 131.9°
Load Matching: Mag 0.27 Ang 87.0°
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=80mA
Source Matching: Mag 0.71 Ang 131.9°
Load Matching: Mag 0.35 Ang 90.9°
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
G ain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
Pout
G ain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
Pout
G ain
IP3
add
IM3
IM3/Pout
Pout
G ain
IP3
add
IM3
IM3/Pout
Pout
G ain
IP3
add
IM3
IM3/Pout




















[Note] P
out
and
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=100mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-15.0
0.3
15.3
-73.7
-74.0
37.3
98.1
0.2
-10.0
5.7
15.7
-65.9
-71.7
41.6
96.4
0.6
-5.0
10.8
15.8
-61.4
-72.2
46.8
93.6
2.1
0.0
15.8
15.8
-28.2
-44.0
37.8
88.6
7.0
5.0
20.9
15.9
0.2
-20.7
29.9
85.9
23.2
10.0
24.6
14.6
16.1
-8.5
23.6
93.7
49.0
15.0
25.6
10.6
20.6
-5.0
21.5
105.7
52.5
Id=80mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-15.0
0.2
15.2
-76.1
-76.3
38.3
78.5
0.2
-10.0
5.6
15.6
-66.9
-72.5
42.0
76.8
0.8
-5.0
10.7
15.7
-50.5
-61.2
41.0
74.1
2.6
0.0
15.8
15.8
-24.1
-39.8
35.4
69.5
8.8
5.0
21.1
16.1
4.1
-17.0
27.7
70.5
29.4
10.0
24.1
14.1
17.5
-6.7
21.3
80.4
51.6
15.0
25.0
10.0
19.8
-5.2
21.0
90.0
52.2





















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25°C, Vds=6V, Ids=100mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.73
85.8
Source : 0.79
160.5
Pout max : 15.75dBm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.27
87.0
Source : 0.71
131.9
IP3 max : 45.75d Bm
Tc= 25°C, Vds=6V, Ids=80mA , Pin=-5d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.74
89.0
Source : 0.79
160.5
Pout max : 16.05dBm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.35
90.9
Source : 0.71
131.9
IP3 max : 40.95d Bm
+j100
+j50
+j25
-j25
-j50
-j100
100
50
25
45.75
44.7543.75
40.75
41.75
42.75
38.45
39.45
38.95
40.95
39.95
40.45
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
38.45
39.45
38.95
40.95
39.95
40.45
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.5
15.0
14.75
15.75
15.25
15.5
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.8
15.3
15.05
16.05
15.55
15.8
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.8
15.3
15.05
16.05
15.55
15.8
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100