FEATURES

ˇ Data rate up to 2.5Gb/s
ˇ -23dBm typ. sensitivity
ˇ 30ľm active area PIN chip with GaAs pre-amplifier
ˇ Small co-axial package with multi-mode fiber

APPLICATIONS

ˇ High bit rate short haul optical transmission systems

operating at 2.5Gb/s

DESCRIPTION

These PIN preamplifiers use an InGaAs PIN chip with
GaAs IC preamplifier. The KT package is designed for a
horizontal PC board mount. The LT package is secured by a
vertical flange. Each package is connected with
multi-mode fiber by Nd: YAG welding. The detector
preamplifier is DC coupled and has a low electrical
output when the PIN is illuminated. These devices
are in compliance with ITU-T Recommendations
and meet Bellcore Requirements.

Edition 1.0
March 1999

InGaAs-PIN/Preamp
Receiver

FRM3Z231KT/LT

Edition 1.0

March 1999

InGaAs-PIN/Preamp

Receiver

FRM3Z231KT/LT

Parameter

PIN Responsivity

AC Transimpedance

Maximum Overload

Reverse Voltage

Symbol

R15
R13

OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, =1,310/1,550nm, Vss=-5.2V,
VR=5V, unless otherwise specified)

Bandwidth

Sensitivity

Power Supply Current

Iss

Parameter

Storage Temperature

Operating Temperature

Supply Voltage

PIN Reverse Voltage

Symbol

Tstg

-40 to +85

-7 to 0

0 to 20

°C
°C

Top

Vss

PIN Reverse Current

2.0

IR (Note 1)

Ratings

Unit

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

A/W
A/W

dBm

Unit

GHz

dBm

Limits

-
-

-21

Max.

0.80
0.80

1.8

400

-22

dBm

-3

-23

2.0

Equivalent Input
Noise Current Density

pA/ Hz

6.5

600

0.85
0.85

-5.2

Min.

Typ.

-22

Test Conditions

1,550nm, M=1
1,310nm, M=1

Power Supply Voltage

Vss

-4.94

-5.46

Ta=-40 to +85

°C

(Note 2)

Ta=-40 to +85

°C

2.488Gb/s NRZ,

PRBS=2

-1,

B.E.R.=10

-10

Ta=-40 to +85

°C

Ta=25

°C,

2.488Gb/s NRZ,

PRBS=2

-1,

B.E.R.=10

-10

AC-Coupled, RL=50

Average within BW

AC-Coupled, RL=50

Pin <-27dBm,

-3dBm from 1MHz

AC-coupled, f=100MHz,

RL=50

Pin <-20dBm

Note: (1) CW condition

(2) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output

waveform is less than 10% compared with that of the low input optical power level.

(3) Optical characteristics are specified on the condition that single mode fiber is used as the

optical source for testing.

(4) No data is available for either device.

Edition 1.0
March 1999

InGaAs-PIN/Preamp
Receiver

FRM3Z231KT/LT

Fig. 2 Relative Frequency Response

Relative Response (3dB/div)

Frequency, f (MHz)

1000

100

Ta = 25°C
Vss=-5.2V
AC-Coupled
RL=

Pin=-30dBm
= 1,310/1,550nm

Fig. 1 Output Characteristics

Output Voltage Peak, Vpp(mV)

Average Photocurrent, Ip.ave (mA)

0.5

0.4

0.3

0.2

0.1

0.6

0.7

Zt ~ 600

Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=

100Mb/s
Duty 50%
Mark density 50%

Fig.3 Equivalent Input Noise Current Density

Relative Input Noise Current Density,

in (pA/sqr. Hz)

Frequency, f (GHz)

2.0

1.0

Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=

Fig.4 Eye Diagram with a 1,310nm,

2.5Gb/s NRZ, 2

-1 PRBS incident signal

100ps/div

Input optical wave form with Bessel filter

Equivalent output wave form at

Pin=-22dBm, Tc=25

°C, M=optimum

Edition 1.0

March 1999

InGaAs-PIN/Preamp

Receiver

FRM3Z231KT/LT

Fig.5 Bit Error Rate

Bit Error Rate

Received Optical Power (dBm)

-20

Ta=+25

°C

+85

°C

-40

°C

-25

-30

-12

-10

-8

-6

-4

=1,310/1,550nm
2.5Gb/s, NRZ
Vss=-5.2V
VR=

2-C1.5

8.4

ą0.2

8.4

0.2

4.2

ą0.2

2.0

ą0.1

14.0

0.15

17.0

0.2

OUT

GND

VSS

10.0 MIN

2.5

ą0.1

4.4 MAX

32.0 MAX

1000 MIN

0.45

0.05

6.0 MAX

7.2 MAX

0.9

0.1

GND

VSS

OUT

P.C.D. 4.0

0.2

P.C.D. 2.0

0.2

"KT" PACKAGE

7.6 MAX

2.5

ą0.1

GND

VSS

OUT

17.0

0.2

14.0

0.15

10.0 MIN

1.0

ą0.1

32.0 MAX

1000 MIN

P.C.D. 4.0

0.2

0.45

0.05

P.C.D. 2.0

0.2

6.0 MAX

7.2 MAX

0.9

OUT

GND

VSS

"LT" PACKAGE

UNIT: mm

Edition 1.0
March 1999

InGaAs-PIN/Preamp
Receiver

FRM3Z231KT/LT

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.

2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111

55 Schanck Road,
Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393

www.fcsi.fujitsu.com

FUJITSU MIKROELECTRONIK GmbH

Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888

FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan

2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Phone: 3-5322-3356
FAX: 3-5322-3398

Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:

CAUTION

ˇ Do not put this product into the mouth.

ˇ Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.

ˇ Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.

Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.

Š 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.

Printed in U.S.A. FCSI0199M200

Part Number FRM3Z231KT