FEATURES
· High Output Power: P1dB = 41.5dBm (Typ.)
· High Gain: G1dB = 10.0dB (Typ.)
· High PAE:
add = 37% (Typ.)
· Low IM3 = -46dBc@Po = 30.5dBm
· Broad Band: 5.9 ~ 6.4GHz
· Impedance Matched Zin/Zout = 50
· Hermetically Sealed Package
1
Edition 1.2
August 2004
FLM5964-12F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
57.6
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50
.
DESCRIPTION
The FLM5964-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
5000
7500
-
5000
-
-0.5
-1.5
-3.0
-5.0
-
-
9.0
10.0
-
-
37
-
40.5
41.5
-
VDS = 5V, IDS = 250mA
VDS = 5V, IDS = 3250mA
VDS = 5V, VGS = 0V
IGS = -250µA
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 6.4 GHz,
ZS=ZL= 50 ohm
f = 6.4 GHz,
f = 10 MHz
2-Tone Test
Pout = 30.5dBm S.C.L.
mA
mS
V
dB
%
-44
-46
-
dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
3250
3800
mA
Idsr
IM3
add
Gain Flatness
-
-
±0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
Channel to Case
Thermal Resistance
-
2.3
2.6
°C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IK
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°C
Tch
2
FLM5964-12F
C-Band Internally Matched FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°C)
60
45
30
15
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 6.4 GHz
f2 = 6.41 GHz
2-tone test
15
17
19
21
23
25
27
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
27
29
31
33
37
35
25
23
21
-55
-50
-45
-40
-35
-30
-25
-20
Output Power (S.C.L.) (dBm)
IM3
Pout
IM
3
(dBc)
OUTPUT POWER vs. FREQUENCY
Pin=32.5dBm
28.5dBm
26.5dBm
30.5dBm
6.0
5.9
6.1
6.3
6.2
6.4
Frequency (GHz)
38
39
40
41
42
43
44
37
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 6.15 GHz
20
22
24
26
28
30
32
Input Power (dBm)
42
44
40
38
36
34
32
30
20
30
40
50
10
0
Output Power (dBm)
add
Pout
add
(%)
4
FLM5964-12F
C-Band Internally Matched FET
4-R 1.3
±0.15
(0.051)
0.6
(0.024)
14.9
(0.587)
20.4
±0.3
(0.803)
24
±0.5
(0.945)
5.5 Max.
(0.217)
2.4
±0.15
(0.094)
0.1
(0.004)
1.4
(0.055)
17.4
±
0.3
(0.685)
8.0
±
0.2
(0.315)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
Case Style "IK"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
1
3
2
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
· Do not put this product into the mouth.
· Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
· Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
PDF 
ZIP