1
Edition 1.3
August 2004
FLM1213-12F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
57.6
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with
gate resistance of 50
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
6000
9000
-0.5
-1.5
-3.0
39.5
40.5
-
4.5
5.5
-
VDS = 5V, IDS = 300mA
VDS = 5V, IDS = 3600mA
VDS = 5V, VGS = 0V
IGS = -340µA
VDS = 10V
f = 12.7 ~ 13.2 GHz
IDS = 0.6 IDSS(Typ.)
ZS = ZL = 50
mA
V
-
5000
-
mS
-5
-
-
V
dB
dBm
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
3600
4500
mA
Idsr
Power-Added Efficiency
-
24
-
%
add
Gain Flatness
-
-
±0.6
dB
G
Thermal Resistance
Channel to Case
-
2.3
2.6
°C/W
CASE STYLE: IB
Rth
3rd Order Intermodulation
Distortion
f = 13.2GHz,
f = 10MHz
2-Tone Test
Pout = 28dBm S.C.L.
-42
-45
-
dBc
IM3
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
G.C.P.: Gain Compression Point
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°C
Tch
FEATURES
· High Output Power: P1dB = 40.5dBm (Typ.)
· High Gain: G1dB = 5.5dB (Typ.)
· High PAE:
add = 24% (Typ.)
· IM3 = -45dBc@Po = 28dBm
· Broad Band: 12.7 ~ 13.2GHz
· Impedance Matched Zin/Zout = 50
· Hermetically Sealed
DESCRIPTION
The FLM1213-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLM1213-12F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°C)
60
45
30
15
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 13.2 GHz
f2 = 13.21 GHz
2-tone test
17
15
21
19
23
27
29
25
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Output Power (S.C.L.) (dBc)
-20
-10
-30
-40
-50
25
23
21
27
31
33
35
29
IM
3
(dBc)
IM3
Pout
26
28
30
32
34
36
32
34
36
38
40
20
10
30
Input Power (dBm)
Output Power (dBm)
add (%)
add
Pout
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 12.95 GHz
12.7
12.8
12.9
13.0
13.1
13.2
34
32
36
38
40
Frequency (GHz)
Output Power (dBm)
OUTPUT POWER vs. FREQUENCY
VDS = 10V
P1dB
Pin = 36dBm
32dBm
30dBm
28dBm
26dBm
4
FLM1213-12F
X, Ku-Band Internally Matched FET
2-R 1.6
±0.15
(0.063)
0.6
(0.024)
10.7
(0.421)
12.0
(0.422)
17.0
±0.15
(0.669)
21.0
±0.15
(0.827)
12.9
±
0.2
(0.508)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
0.2 Max.
(0.008)
1.45
(0.059)
Case Style "IB"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
5.2 Max.
(0.205)
2.6
±0.15
(0.102)
0.1
(0.004)
1
2
3
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
· Do not put this product into the mouth.
· Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
· Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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