MUN5311dw1/13
1
3
2
MUN5311DW1T1
Series
SOT-363
CASE 419B STYLE1
6
4
5
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a baseemitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT363 package
which is ideal for low power surface mount applications where board space is at a premium.
· Simplifies Circuit Design
· Reduces Board Space
· Reduces Component Count
· Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
1
3
2
6
4
5
Q
1
Q
2
R
1
R
2
R
1
R
2
XX
MARKING DIAGRAM
1
3
2
6
4
5
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
xx = Device Marking
=
(See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
187 (Note 1.)
mW
T
A
= 25°C
Derate above 25°C
mW/°C
Thermal Resistance
R
JA
670 (Note 1.)
°C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance
Junction-to-Ambient
R
JA
493 (Note 1.)
325 (Note 2.)
°C/W
Thermal Resistance
Junction-to-Lead
R
JL
188 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage
Temperature
T
J
, T
stg
55 to +150
°C
1. FR4 @ Minimum Pad 2. FR4 @ 1.0 x 1.0 inch Pad
MUN5311dw2/13
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R
1
(K)
R
2
(K)
Shipping
MUN5311DW1T1
SOT363
11
10
10
3000/Tape & Reel
MUN5312DW1T1
SOT363
12
22
22
3000/Tape & Reel
MUN5313DW1T1
SOT363
13
47
47
3000/Tape & Reel
MUN5314DW1T1
SOT363
14
10
47
3000/Tape & Reel
MUN5315DW1T1 (Note 3.)
SOT363
15
10
3000/Tape & Reel
MUN5316DW1T1 (Note 3.)
SOT363
16
4.7
3000/Tape & Reel
MUN5330DW1T1 (Note 3.)
SOT363
30
1.0
1.0
3000/Tape & Reel
MUN5331DW1T1 (Note 3.)
SOT363
31
2.2
2.2
3000/Tape & Reel
MUN5332DW1T1 (Note 3.)
SOT363
32
4.7
4.7
3000/Tape & Reel
MUN5333DW1T1 (Note 3.)
SOT363
33
4.7
47
3000/Tape & Reel
MUN5334DW1T1 (Note 3.)
SOT363
34
22
47
3000/Tape & Reel
MUN5335DW1T1 (Note 3.)
SOT363
35
2.2
47
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
MUN5311DW1T1
(V
EB
= 6.0 V, I
C
= 0)
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5311DW1T1 Series
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
=10
µ
A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
=2.0 mA,I
B
=0) V
(BR)CEO
50
Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
8 8
MUN5311dw3/13
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain
MUN5311DW1T1
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5311DW1T1 Series
V
CE(sat)
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA)
MUN5330DW1T1/MUN5331DW1T1
(I
C
= 10 mA, I
B
= 1 mA)
MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0V, V
B
= 2.5V,R
L
= 1.0 k
) MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(V
CC
=5.0V,V
B
=3.5 V, R
L
=1.0k
)
MUN5313DW1T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
MUN5311dw4/13
Output Voltage (off)
(V
CC
=5.0V, V
B
=0.5V, R
L
=1.0k
)
(V
CC
=5.0V, V
B
=0.050V, R
L
=1.0k
) MUN5330DW1T1
(V
CC
=5.0V, V
B
=0.25V, R
L
=1.0k
) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(Note 5.)
V
OH
4.9
Vdc
Input Resistor
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k
Resistor Ratio
MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R
1
/ R
2
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056
5. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
P
D
, POWER DISSIP
A
TION (mW)
300
250
200
150
100
50
0
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
50
0
50
100
150
MUN5311dw5/13
MUN5311DW1T1 Series
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V in , INPUT
VOL
T
AGE (VOL
TS)
I
C
, COLLECT
OR CURRENT
(mA)
V
CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
1
0.1
0.01
0.001
0
20
40
50
h
FE
, DC CURRENT GAIN (NORMALIZED)
1000
100
10
1
10
100
4
3
2
1
0
0
10
20
30
40
50
C ob CAP
ACIT
ANCE (pF)
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
10
1
0.1
0
10
20
30
40
50
TYPICAL ELECTRICAL CHARACTERISTICS MUN5311DW1T1 NPN TRANSISTOR
PDF 
ZIP