N21/1
PNP General Purpose Amplifier
Transistor Surface Mount
CASE 318D03, STYLE1
SC59
MAXIMUM RATINGS
(T
A
= 25 °C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
60
Vdc
Collector-Emitter Voltage
V
(BR)CEO
45
Vdc
Emitter-Base Voltage
V
(BR)EBO
7.0
Vdc
Collector Current - Continuous
I
C
100
mAdc
Collector Current - Peak
I
C(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
stg
55 ~ +150
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (I
C
=2.0mAdc,I
B
=0)
V
(BR)CEO
45
--
Vdc
Collector-Base Breakdown Voltage (I
C
=10
µ
Adc,I
E
=0)
V
(BR)CBO
60
--
Vdc
Emitter-Base Breakdown Voltage (I
E
=10
µ
Adc,I
E
=0)
V
(BR)EBO
7.0
--
Vdc
Collector-Base Cutoff Current (V
CB
=45Vdc, I
E
=0)
I
CBO
--
0.1
µ
Adc
Collector-Emitter Cutoff Current (V
CE
=10Vdc, I
B
=0)
I
CEO
--
100
nAdc
DC Current Gain
(1)
h
FE1
210
340
--
(V
CE
=10Vdc, I
C
= 2.0mAdc)
Collector-Emitter Saturation Voltage
V
CE(sat)
--
0.5
Vdc
(I
C
= 100mAdc, I
B
=10mAdc)
1. Pulse Test: Pulse Width
300
µ
s, D.C.
2%.
DEVICE MARKING
Marking Symbol
The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
COLLECTOR
3
2 1
BASE EMITTER
ARX
<
<
1
3
2
MSB709-RT1
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