O31/1
MMBT1010LT1
MSD1010T1
CASE 31808, STYLE 6
SOT 23
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
45
Vdc
Collector-Emitter Voltage
V
(BR)CEO
15
Vdc
Emitter-Base Voltage
V
(BR)EBO
5.0
Vdc
Collector Current -- Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
(1)
250
mW
T
A
=25 °C
Derate above 25°C
1.8
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
556
°C/W
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
stg
55 --+150
°C
DEVICE MARKING
MMBT1010LT1 = GLP; MSD1010T1 = GLP
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Condition
Min
Max
Unit
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA, I
B
= 0
15
--
Vdc
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
µ
A,I
E
= 0
5.0
--
Vdc
Collector-Base Cutoff Current
I
CBO
V
CB
= 20 V, I
E
= 0
--
0.1
µ
A
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 10 V, I
B
= 0
--
100
µ
A
DC Current Gain
h
FE1
(2)
V
CE
= 5 V,I
C
= 100 mA
300
600
--
Collector-Emitter Saturation Voltage
V
CE(sat)
(2)
I
C
= 10 mA, I
B
= 1.0 mA
--
0.1
Vdc
I
C
= 50 mA, I
B
= 5.0 mA
--
0.1
I
C
= 100 mA, I
B
= 10 mA
0.19
Base-Emitter Saturation Voltage
V
BE(sat)
(2)
I
C
= 100 mA, I
B
= 10 mA
--
1.1
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width <300
µ
s, D.C <2%.
Low Saturation Voltage
PNP Silicon Driver Transistors
Part of the GreenLine
TM
Portfolio of devices with energyconserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in
general purpose driver applications. This device is housed in the SOT-23 and
SC59 packages which are designed for low power surface mount applications.
· Low V
CE(sat)
, < 0.1 V at 50 mA
Applications
· LCD Backlight Driver
· Annunciator Driver
· General Output Device Driver
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
CASE 318D 04, STYLE 1
SC 59
EMITTER
COLLECTOR
BASE
1
3
2
1
3
2
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