GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
VTV150
15 Watts, 25 Volts
VHF Television - Band III
GENERAL DESCRIPTION
CASE OUTLINE
The VTV 150 is a COMMON EMITTER transistor capable of providing 15
Watts Peak Sync, Class A, RF Output Power over the band 175 - 225 MHz. It
is designed for high efficiency, high linereity, Class A operation. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
55HV, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 97 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 45 Volts
BVceo Collector to Emitter Voltage 25 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 8.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Power Input
Vcc = 25 Volts
1.9
Watts
Pg
IMD
1
VSWR
1
Power Out - Pk Sync
F = 175-225 MHz
15
20
Watts
1
Power Gain
Ic = 2.4 Amps
8.0
9.0
dB
Efficiency
33
%
Intermodulation Distortion
Pref = 15 Watts
-52
dB
Load Mismatch Tolerance
F = 225 MHz
3:1
LVceo
BVces
Collector to Base Breakdown
Ic = 100mA
45
Volts
BVebo
h
FE
Cob
jc
Collector to Emitter Breakdown
Ic = 25 mA
28
Volts
Emitter to Base Breakdown
Ie = 10mA
4.0
Volts
Current Gain
Vce = 5 V, 1 mA
10
Output Capacitance
Vcb = 25 V, F = 1 MHz
68
pF
Thermal Resistance
Tc = 25 C
1.6
1.8
C/W
o
o
Note 1: European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Issue October 1997
v
bb
R
1
C
13
L
4
C
1
.56"
L
1
C
2
C
3
.30"
.94"
C
4
C
5
Q
1
.83"
.51"
.34"
C
6
C
7
C
8
L
2
.32"
C
9
L
5
R
2
C
14
C
15
L
6
C
16
C
17
V
cc
VTV-150 RF Test Circuit (Tunable 175-225 MHz)
Recommended Bias: V
CE
=25 V, I
C
=2.4 A (DC Bias not shown)
VTV-150
C1, C9, C13, C14 ........ 470pF ceramic chip
C2, C3, C8 .................. 5-70pF compressed mica
C4 ............................... 75pF ceramic chip
C5 ............................... 82pF ceramic chip
C6 ............................... 2-20pF air tuned
C7 ............................... 25-240pF compressed mica
C10, C17 ..................... 50 mF electrolytic
C11, C16 ..................... 1mF electolytic
C12, C15 ..................... 1000pF ceramic chip
L1 ................... Cu strap, 1.20" X .12" X .03"
L2 ................... Cu strap, 1.05" X .12" X .04"
L3, L6 .............. 10 turns #22 wire on F627-8Q1
L4 ................... 4.7 m H
L5 ................... 7 turns #22 wire (0.15" outer diameter)
R
1
, R
2
.................15 W 1/2- Watt carbon
BOARD MATERIAL is 1/16" Teflon glass,
2 oz. Cu microstriplines are 50W nominal.
C
10
C
11
C
12
August 1996
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