The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
Preliminary
Preliminary
Product Description
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101574 Rev A
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Stanford Microdevices' SHF-0186 is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186 is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
SHF-0186
DC-12 GHz, 0.5 Watt
AlGaAs/GaAs HFET
Product Features
·
Patented AlGaAs/GaAs Heterostructure FET
Technology
·
+28 dBm P1dB Typical
·
+40 dBm Output IP3 Typical
·
High Drain Efficiency: Up to 46% at Class AB
·
17 dB Gain at 900 MHz (Application circuit)
·
15 dB Gain at 1900 MHz (Application circuit)
·
Gmax Guaranteed at 12 GHz
Applications
·
Analog and Digital Wireless System
·
Cellular PCS, CDPD, Wireless Data, Pagers
·
AN-020 Contains detailed application circuits
Gain vs. Frequency
Frequency (GHz)
G
Max
(dB)
S21
Gmax
V
DS
=8V, I
DQ
=100mA
SHF-0186 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
Preliminary
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
2
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101574 Rev A
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Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
DS
V
DS
(max) < (T
J
- T
L
)/R
TH
Typical Performance - Engineering Application Circuits (See AN-020)
Data above represents typical performance of the application circuits noted in Application Note AN-020.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.stanfordmicro.com or call your local sales representative.
Z
SOPT
G
Z
LOPT
S
D
* 15dBm per tone
SHF-0186 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
Preliminary
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
3
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101574 Rev A
-10
0
10
20
30
40
0
2
4
6
8
10
12
-50
-40
-30
-20
-10
0
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
De-embedded S-Parameters (Z
S
=Z
L
=50 Ohms, V
DS
=8V, I
DQ
=100mA, 25
°
C)
Frequency (GHz)
Gain (dB)
Isolation (dB)
S21
Gmax
S12
Gain (dB)
Frequency (GHz)
T = -40, 25, 85
°
C
Insertion Gain & Isolation
Insertion Gain vs Temperature
Note: S-parameters are de-embedded to the device leads. The data represents typical performace of the device. Measured s-parameter
data files can be downloaded using a link found on the SHF-0186 device page from our web site at www.stanfordmicro.com.
V
DS
(Volts)
I
DS
(mA)
DC-IV Curves (V
GS
= -2 to 0V, 0.2V steps)
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
V
GS
= 0V
V
GS
= -2V
S22 vs Frequency
0.0
0.2
0.5
1.0
2.0
0.2
0.5
1.0
2.0
5.0
inf
0.2
0.5
1.0
2.0
5.0
5.0
10 GHz
6 GHz
3 GHz
2 GHz
1 GHz
13 GHz
S11 vs Frequency
0.0
0.2
0.5
1.0
2.0
5.0
0.2
0.5
1.0
2.0
5.0
inf
0.2
0.5
1.0
2.0
5.0
10 GHz
6 GHz
3 GHz
2 GHz
1 GHz
13 GHz
SHF-0186 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
Preliminary
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
4
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101574 Rev A
Part Number Ordering Information
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Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Package Dimensions
PCB Pad Layout
The part will be symbolized with an "H1" designator
on the top surface of the package.
Part Symbolization
H1
H1
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