PLANETA JS , 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
Ph./Fax: +78162231736
E-mail: planeta@novgorod.net
© July 2000 Rev 1
http://www.novgorod.net/~planeta
PLANETA
The RF Line
NPN Silicon
High-Frequency Transistor
DESCRIPTION
The BFR91A is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
This small-signal p lastic transistor offers superior quality and
performance at low cost.
FEATURES
High Gain-Bandwidth Products
f
T
= 6.0 GHz (Typ) @ 30 mA
Low Noise Figure
N
F
= 1.6 dB (Typ) @ 800 MHz
High Gain
G
PS
= 13.0 dB (Typ) @ 800 MHz
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C)
Rating Symbol
Value
Unit
Collector- Emitter Voltage
V
CEO
12
V
Collector- Base Voltage
V
CBO
20
V
Emitter- Base Voltage
V
EBO
2
V
Collector Current
I
C
50
mA
Power Dissipation
P
tot
300
mW
Junction Temperature
T
JMAX
150
°C
Operating Junction Temperature Range
T
J
-45 to +70
°C
Storage Temperature Range
T
STG
-65 to +150
°C
THERMAL CHARACTERISTIC
Thermal Resistance, Junction to Case
R
JC
400
°C/W
ORDERING INFORMATION
Device Marking Package Quantity
Packing
Style
BFR91A
BFR91A
SOT-37
1 Kpcs / plastic bags In bulk
BFR91A
SOT37
JEDEC TO-50
EIAJ
GOST KT-29
Weight: 0.2g
1
2
3
1 Base
2 Collector
3 Emitter
BFR91A
Ph./Fax: +78162231736
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta
© July 2000 Rev 1
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
Characteristic Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS
Collector Cutoff Current,
I
E
= 0mA, V
CB
=10V
I
CBO
100
nA
Emitter Cutoff Current,
I
C
= 0mA, V
EB
= 2V
I
EBO
10
µA
Collector Emitter Breakdown Voltage,
I
C
= 1mA, I
B
= 0mA
V
(BR)CEO
12
V
DC Current Gain,
I
E
=30mA, V
CB
= 5V
h
FE
50
120
300
Collector Emitter Saturation Voltage,
I
C
= 1mA, I
B
= 0mA
V
CE(sat)
100
400
mV
AC CHARACTERISTICS
Transition Frequency,
I
C
=30mA, V
CB
= 5V, f=300MHz
f
T
4.5
6.0
GHz
Collector-Base Capacitance,
I
E
= 0mA, V
CB
=10V, f= 1MHz
C
cb
0.4
0.9
pF
Noise Figure,
I
E
= 5mA, V
CE
= 8V, f=800MHz
N
F
1.6
2.0
dB
Power Gain,
I
E
=30mA, V
CE
= 8V, f=800MHz
G
PS
12.0
13.0
dB
h
FE
CLASSIFICATION
Class K
H
F
E
h
FE
50 to 300
50 to 100
80 to 160
125 to 250
TIPICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 2. Collector Base Capacitance vs.
Collector Base Voltage
0
0,2
0,4
0,6
0,8
1
0
5
10
15
20
V
CB
- Collector Base Voltage (V)
C
cb
- Collector Base Capacitance (p
F
V
CB
=10V
f=1MHZ
0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
140
160
T
amb
- Ambient Temperature (°C)
P
tot
- Total Power Dissipation (m
W
BFR91A
PLANETA JS , 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
Ph./Fax: +78162231736
E-mail: planeta@novgorod.net
© July 2000 Rev 1
http://www.novgorod.net/~planeta
3
TIPICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
Figure 3. Transition Frequency vs.
Emitter Current
Figure 4. Noise Figure vs.
Emitter Current
Figure 5. Power Gain vs.
Emitter Current
Figure 6. DC Current Gain vs.
Emitter Current+
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
40
I
E
- Emitter Current (mA
G
PS
- Power Gain (dB
)
V
CE
=8V
f=800MHZ
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
I
E
- Emitter Current (mA
h
FE
- DC Current Gai
n
V
CB
=5V
0
0,5
1
1,5
2
2,5
3
3,5
0
5
10
15
20
25
30
35
40
I
E
- Emitter Current (mA
N
F
- Noise Figure (dB
)
V
CE
=8V
f=800MHZ
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
40
45
50
I
E
- Emitter Current (mA)
f
T
- Transition Frequency (GH
z
V
CB
=5V
f=300MHZ
BFR91A
Ph./Fax: +78162231736
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta
© July 2000 Rev 1
4
PACKAGE DIMENSIONS in mm
PLASTIC CASE KT-29
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