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Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
17.4
30
50
60
R
JC
4
7.5
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
±20
Gate-Source Voltage
Drain-Source Voltage
60
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum
Units
Parameter
T
C
=25°C
T
C
=100°C
I
D
12
12
30
Junction and Storage Temperature Range
A
P
D
°C
20
10
-55 to 175
T
C
=100°C
Avalanche Current
C
12
Repetitive avalanche energy L=0.1mH
C
23
A
mJ
W
T
A
=70°C
1.3
Power Dissipation
A
T
A
=25°C
P
DSM
2
AOD444, AOD444L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
June 2004
Features
V
DS
(V) = 60V
I
D
= 12 A
R
DS(ON)
< 60 m
(V
GS
= 10V)
R
DS(ON)
< 85 m
(V
GS
= 4.5V)
General Description
The AOD444 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
AOD444L (Green Product) is offered in a lead-free
package.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
Symbol
Min
Typ
Max
Units
BV
DSS
60
V
1
T
J
=55°C
5
I
GSS
100
nA
V
GS(th)
1
2.4
3
V
I
D(ON)
30
A
47
60
T
J
=125°C
85
67
85
m
g
FS
14
S
V
SD
0.74
1
V
I
S
12
A
C
iss
450
540
pF
C
oss
61
pF
C
rss
27
pF
R
g
1.35
2
Q
g
(10V)
7.5
10
nC
Q
g
(4.5V)
3.8
5
nC
Q
gs
1.2
nC
Q
gd
1.9
nC
t
D(on)
4.2
ns
t
r
3.4
ns
t
D(off)
16
ns
t
f
2
ns
t
rr
27.6
35
ns
Q
rr
30
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=10mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=12A
Reverse Transfer Capacitance
I
F
=12A, dI/dt=100A/
µs
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
µA
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
µA
V
DS
=48V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=4.5V, I
D
=6A
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=12A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=12A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=100A/
µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=30V, R
L
=2.5
,
R
GEN
=3
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
40
50
60
70
80
0
4
8
12
16
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
a
lize
d O
n
-
R
e
s
i
s
t
a
n
c
e
V
GS
=4.5V,6A
V
GS
=10V, 12A
40
60
80
100
120
140
160
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=12A
25°C
125°C
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=4V
3.5V
6V
7V
10V
4.5V
5V
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Vo
l
ts)
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
aci
tan
ce (p
F
)
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
wer
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
Norm
a
lize
d Tra
n
s
i
e
n
t
T
h
e
r
m
al
R
esi
stan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
mp
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
µs
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C, T
A
=25°C
V
DS
=30V
I
D
=12A
A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=7.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
A
=25°C
10
µs
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
Norm
a
lize
d Tra
n
s
i
e
n
t
T
h
e
r
m
al
R
esi
stan
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=60°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
2
4
6
8
10
12
14
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A
),
Peak A
val
an
ch
e C
u
r
r
e
n
t
0
5
10
15
20
25
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
P
o
w
e
r Dis
s
i
pa
t
i
on (
W
)
0
2
4
6
8
10
12
14
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Curre
nt
ra
t
i
ng I
D
(A
)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25°C
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
wer
(W
)
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
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