PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt V
CEO
* Gain of 100 at I
C
= 350 mA
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
= 25°C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100
V
I
C
=-100
µ
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-80
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1
µ
A
V
CB
=-80V, I
E
=0
Emitter Cut-Off Current I
EBO
-10
µ
A
V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.35
V
I
C
=-350mA, I
B
=-35mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0
V
IC=-350mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
100
100
300
I
C
=-10mA, V
CE
=-2V*
I
C
=-350mA, V
CE
=-2V*
Transition
Frequency
f
T
50
500
MHz
I
C
=-200mA, V
CE
=-5V
f=20MHz
Collector-Base
Capacitance
C
CB
20
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
E-Line
TO92 Compatible
2N6732
3-11
C
B
E
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