e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 500 mA, f = 960 MHz)
G
ps
11.5
12.5
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 500 mA, f = 960 MHz)
P-1dB
60
--
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 500 mA, f = 960 MHz)
h
48
55
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 500 mA, f = 960 MHz--
Y
--
--
10:1
--
all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10138
60 Watts, 860-960 MHz
GOLDMOS
®
Field Effect Transistor
0
10
20
30
40
50
60
70
0
1
2
3
4
Input Power (Watts)
Output Power (Watts)
10
20
30
40
50
60
70
80
Drain
Ef
f
i
cien
cy (
%
)
X
V
DD
= 28 V
I
DQ
= 500 mA
f = 960 MHz
Typical Output Power & Efficiency vs. Input Power
Output Power
Efficiency
e
10138
A-1234562700
Also available in
Package
20251
Package
20256
e
10139
1234560055
Description
The PTF 10138 is a 60watt GOLDMOS FET intended for amplifier
applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB
gain. Nitride surface passivation and full gold metallization ensure ex-
cellent device lifetime and reliability.
·
Performance at 960 MHz, 28 Volts
- Output Power = 60 Watts Min
- Power Gain = 12.5 dB Typ
- Efficiency = 48% Min
·
Full Gold Metallization
·
Silicon Nitride Passivated
·
Excellent Thermal Stability
·
Back Side Common Source
·
100% Lot Traceability
· Available in Package 20251 as PTF 10139
2
PTF 10138
e
9
10
11
12
13
14
840
860
880
900
920
940
960
Frequency (MHz)
Ga
i
n
40
50
60
70
80
90
O
u
tput Pow
e
r
&
Efficiency
V
DD
= 28 V
I
DQ
= 500 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
8
9
10
11
12
13
14
920
930
940
950
960
Frequency (MHz)
Ga
i
n
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 500 mA
P
OUT
= 60 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency
Return Loss
- 5
-15
-25
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate-Source Leakage Current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
--
--
1
m
A
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.8
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
±20
Vdc
Drain Current - Continuous
I
D
7
Adc
Operating Junction Temperature
T
J
200
°C
Total Device Dissipation
P
D
194
Watts
Above 25°C derate by
1.11
W/°C
Storage Temperature Range
T
STG
-65 to 150
°C
Thermal Resistance (T
CASE
= 70°C)
R
q
JC
0.9
°C/W
Typical Performance
3
PTF 10138
e
Power Gain vs. Output Power
10
11
12
13
14
0
1
100
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 28 V
f = 960 MHz
I
DQ
= 500 mA
I
DQ
= 320 mA
I
DQ
= 225 mA
Output Power vs. Supply Voltage
50
55
60
65
70
75
24
26
28
30
32
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 500 mA
f = 960 MHz
-60
-50
-40
-30
-20
0
10
20
30
40
50
60
70
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V
I
DQ
= 500 mA
f
1
= 959.90 MHz
f
2
= 960.00 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
Capacitance vs. Supply Voltage
0
20
40
60
80
100
120
140
0
10
20
30
40
Supply Voltage (Volts)
Cds
& Cgs
(pF)
0
4
8
12
16
20
24
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Bias Voltage vs. Case Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-20
30
80
130
Case Temperature (°C)
Gate-Source Voltage (V)
0.4
1.364
2.328
3.292
4.256
5.22
Voltage normalized to 1.0 V
Series show current (A)
4
PTF 10138
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 1.5 A)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.941
-175
2.70
36.8
0.028
-82.1
0.993
-175
350
0.949
-176
2.09
32.7
0.022
-82.7
0.990
-176
400
0.958
-178
1.71
28.3
0.017
-83.6
0.991
-178
450
0.968
-179
1.40
24.7
0.013
-82.9
0.994
-179
500
0.975
-179
1.20
22.3
0.009
-83.4
0.998
-179
550
0.973
180
1.03
18.0
0.006
-78.3
0.996
-180
600
0.974
179
0.892
14.6
0.003
-71.0
0.996
180
650
0.982
178
0.788
10.5
0.001
-19.9
0.996
179
700
0.985
177
0.671
6.38
0.003
44.0
0.997
178
750
0.981
177
0.576
3.31
0.004
68.8
0.999
178
800
0.979
176
0.489
0.641
0.007
71.9
0.996
177
850
0.986
175
0.425
0.228
0.008
70.1
0.990
176
900
0.984
175
0.378
0.643
0.010
76.6
0.992
176
950
0.986
174
0.342
-0.107
0.011
79.0
0.994
176
1000
0.992
173
0.316
-0.098
0.014
81.0
0.996
175
1050
0.990
173
0.294
-0.827
0.016
80.6
0.989
175
1100
0.983
172
0.264
-1.69
0.018
78.5
0.985
174
1150
0.984
171
0.245
-2.59
0.020
76.4
0.990
173
1200
0.993
171
0.228
-3.43
0.022
76.2
0.993
173
1250
0.991
171
0.211
-3.76
0.023
76.6
0.987
173
1300
0.986
170
0.192
-4.91
0.025
76.4
0.986
173
1350
0.982
169
0.179
-4.94
0.028
73.3
0.988
172
1400
0.990
169
0.173
-5.51
0.030
69.4
0.986
172
1450
0.991
169
0.159
-5.77
0.029
67.2
0.990
171
1500
0.986
168
0.146
-5.99
0.030
66.3
0.985
171
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
850
0.60
0.40
2.35
0.74
860
0.56
0.56
2.20
0.72
900
0.55
0.80
1.80
0.95
920
0.58
0.90
1.80
1.10
960
0.65
1.10
1.80
1.30
Z Source
Z Load
G
S
D
Impedance Data
V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 500 mA
0.
1
0.
3
0.
5
0.
2
0.
4
0.1
0.
3
0.
5
0.2
0.
4
0.1
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
-
-->
0.
05
0.
45
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Load
Z Source
850 MHz
960 MHz
960 MHz
850 MHz
Z
0
= 10
W
5
PTF 10138
e
Test Circuit Schematic for f = 960 MHz
D.U.T.
PTF 10138
l
1
0.207
l
960 MHz
Microstrip 50
W
l
2
0.075
l
960 MHz
Microstrip 15.7
W
l
3
0.158
l
960 MHz
Microstrip 5.1
W
l
4
0.214
l
960 MHz
Microstrip 8.3
W
l
5
0.015
l
960 MHz
Microstrip 50
W
l
6
0.214
l
960 MHz
Microstrip 50
W
C1
3.0 pF Capacitor
100 B 3R0
C2, C3, C4, C6
36 pF Capacitor
100 B 360
C5
0.1
m
F, 50 V Capacitor
Digi-Key P4525-ND
C7
100
m
F, 50 V Capacitor
Digi-Key P5182-ND
C8
0.3 pF Capacitor
ATC 100 B
L1
4 Turns, 22 AWG, .120" I.D.
N/A
R1, R2, R3
220
W
, 1/4 W Resistor
Digi-Key
220 QBK-NO
Circuit Board
0.031" Thick,
e
r
= 4.0, AlliedSignal, G200, 2 oz.
copper
Test Circuit
Placement Diagram (not to scale)
PDF 
ZIP