1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
10
01.11.2003
BSR 17A
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehäuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BSR 17A
Collector-Emitter-voltage
B open
V
CE0
40 V
Collector-Base-voltage
E open
V
CB0
60 V
Emitter-Base-voltage
C open
V
EB0
6 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (dc)
I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current Basis-Spitzenstrom
I
BM
100 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
CB0
50 nA
I
E
= 0, V
CB
= 30 V, T
j
= 150
/
C
I
CB0
5
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 6 V
I
EB0
30 nA
Collector saturation volt. Kollektor-Sättigungsspg.
1
)
I
C
= 10 mA, I
B
= 1 mA
V
CEsat
200 mV
I
C
= 50 mA, I
B
= 5 mA
V
CEsat
200 mV
2.
5
ma
x
1.
3
±0
.
1
1.1
2.9
±0.1
0.4
1
2
3
Type
Code
1.9
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
11
01.11.2003
Switching Transistors
BSR 17A
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Base saturation voltage Basis-Sättigungsspannung
1
)
I
C
= 10 mA, I
B
= 1 mA
V
BEsat
650 mV
850 mV
I
C
= 50 mA, I
B
= 5 mA
V
BEsat
950 mV
DC current gain Kollektor-Basis-Stromverhältnis
1
)
V
CE
= 1 V, I
C
= 0.1 mA
h
FE
60
V
CE
= 1 V, I
C
= 1 mA
h
FE
80
V
CE
= 1 V, I
C
= 10 mA
h
FE
100
300
V
CE
= 1 V, I
C
= 50 mA
h
FE
60
V
CE
= 1 V, I
C
= 100 mA
h
FE
30
Gain-Bandwidth Product Transitfrequenz
V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
f
T
300 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazität
V
CB
= 5 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
4 pF
Emitter-Base Capacitance Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
8 pF
Noise figure Rauschzahl
V
CE
= 5 V, I
C
= 100
:
A, R
S
= 1 k
S
,
f = 10 Hz...15.7 kHz
F
5 dB
Switching times Schaltzeiten
turn-on time
I
Con
= 10 mA
I
Bon
= 1 mA
- I
Boff
= 1 mA
t
on
65 ns
delay time
t
d
35 ns
rise time
t
r
35 ns
turn-off time
t
off
240 ns
storage time
t
s
200 ns
fall time
t
f
50 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BSR 18A
Marking - Stempelung
BSR 17A = U92
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