1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
6
01.11.2003
2.
5
ma
x
1.
3
±0
.
1
1.1
2.9
±0.1
0.4
1
2
3
Type
Code
1.9
BSR 13, BSR 14
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehäuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BSR 13
BSR 14
Collector-Emitter-voltage
B open
V
CE0
30 V
40 V
Collector-Base-voltage
E open
V
CB0
60 V
75 V
Emitter-Base-voltage
C open
V
EB0
5 V
6 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (dc)
I
C
800 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
800 mA
Peak Base current Basis-Spitzenstrom
I
BM
200 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 50 V
BSR 13
I
CB0
30 nA
I
E
= 0, V
CB
= 50 V, T
j
= 150
/
C
I
CB0
10
:
A
I
E
= 0, V
CB
= 60 V
BSR 14
I
CB0
10 nA
I
E
= 0, V
CB
= 60 V, T
j
= 150
/
C
I
CB0
10
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 5 V
BSR 13
I
EB0
30 nA
BSR 14
I
EB0
10 nA
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
7
01.11.2003
Switching Transistors
BSR 13, BSR 14
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhältnis
1
)
V
CE
= 10 V, I
C
= 0.1 mA
BSR 13
BSR 14
h
FE
35
V
CE
= 10 V, I
C
= 1 mA
h
FE
50
V
CE
= 10 V, I
C
= 10 mA
h
FE
75
V
CE
= 10 V, I
C
= 150 mA
h
FE
100
300
V
CE
= 1 V, I
C
= 150 mA
h
FE
50
V
CE
= 10 V, I
C
= 500 mA
BSR 13
h
FE
30
BSR 14
h
FE
40
Collector saturation volt. Kollektor-Sättigungsspg.
1
)
I
C
= 150 mA, I
B
= 15 mA
BSR 13
V
CEsat
400 mV
BSR 14
V
CEsat
300 mV
I
C
= 500 mA, I
B
= 50 mA
BSR 13
V
CEsat
1.6 V
BSR 14
V
CEsat
1 V
Base saturation voltage Basis-Sättigungsspannung
1
)
I
C
= 150 mA, I
B
= 15 mA
BSR 13
V
BEsat
1.3 V
BSR 14
V
BEsat
0.6 V
1.2 V
I
C
= 500 mA, I
B
= 50 mA
BSR 13
V
BEsat
2.6 V
BSR 14
V
BEsat
2 V
Gain-Bandwidth Product Transitfrequenz
V
CE
= 20 V, I
C
= 20 mA,
f = 100 MHz
BSR 13
f
T
250 MHz
BSR 14
f
T
300 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
8 pF
Switching times Schaltzeiten
turn-on time
I
Con
= 150 mA
I
Bon
= 15 mA
- I
Boff
= 15 mA
t
on
35 ns
delay time
t
d
15 ns
rise time
t
r
20 ns
turn-off time
t
off
250 ns
storage time
t
s
200 ns
fall time
t
f
60 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BSR 15, BSR 16
Marking - Stempelung
BSR 13 = U7
BSR 14 = U8
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