1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300
:s, duty cycle # 2% Gemessen mit Impulsen t
p
= 300
:s, Schaltverhältnis # 2%
12
1
2
3
Type
Code
2.
1
±0
.
1
2
±0.1
0.9
±0.1
1.2
5
±0
.
1
4
6
5
6.5
6.5
2.4
BC846S ... BC848S
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-04-09
Dimensions / Maße in mm
Power dissipation Verlustleistung
310 mW
Plastic case
SOT-363
Kunststoffgehäuse
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
6 = C1
5 = B2
4 = E2
1 = E1
2 = B1
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/C)
Grenzwerte (T
A
= 25
/C)
BC846S
BC847S
BC848S
Collector-Emitter-voltage
B open
V
CE0
65 V
45 V
30 V
Collector-Base-voltage
E open
V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
6 V
5 V
Power dissipation Verlustleistung
P
tot
310 mW
1
)
Collector current Kollektorstrom (dc)
I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current Basis-Spitzenstrom
I
BM
200 mA
Peak Emitter current Emitter-Spitzenstrom
- I
EM
200 mA
Junction temperature Sperrschichttemperatur
T
j
150
/C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/C
Characteristics (T
j
= 25
/C)
Kennwerte (T
j
= 25
/C)
DC current gain Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 5 V, I
C
= 10
:A
V
CE
= 5 V, I
C
= 2 mA
h
FE
h
FE
typ. 90 ... 270
110 ... 800
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
h
fe
typ. 220 ... 600
Input impedance Eingangs-Impedanz
h
ie
1.6 ... 15 k
S
Output admittance Ausgangs-Leitwert
h
oe
18 ...110
:S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 ... 3 *10
-4
1
) Tested with pulses t
p
= 300
:s, duty cycle # 2% Gemessen mit Impulsen t
p
= 300
:s, Schaltverhältnis # 2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
13
1
2
3
4
6
5
T1
T2
General Purpose Transistors
BC846S ... BC848S
Characteristics (T
j
= 25
/C)
Kennwerte (T
j
= 25
/C)
Min.
Typ.
Max.
Collector saturation volt. Kollektor-Sättigungsspg.
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
V
CEsat
90 mV
200 mV
250 mV
600 mV
Base saturation voltage Basis-Sättigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
V
BEsat
700 mV
900 mV
Base-Emitter voltage Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
BEon
V
BEon
580 mV
660 mV
700 mV
770 mV
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
E
= 0, V
CB
= 30 V, T
j
= 150
/C
I
CB0
I
CB0
15 nA
5
:A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
EB0
100 nA
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacit. Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
3.5 pF
6 pF
Emitter-Base Capacitance Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
9 pF
Noise figure Rauschzahl
V
CE
= 5 V, I
C
= 200
:A
R
G
= 2 k
S, f = 1 kHz, )f = 200 Hz
F
2 dB
10 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC856S ... BC858S
Pinning Anschlußbelegung
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