1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
8
01.11.2003
1
2
3
Type
Code
2.1
±0
.
1
2
±0.1
1
±0.1
1.
2
5
±0
.
1
0.3
1.3
BC 817W / BC 818W
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation Verlustleistung
225 mW
Plastic case
SOT-323
Kunststoffgehäuse
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 817W
BC 818W
Collector-Emitter-voltage
B open
V
CE0
45 V
25 V
Collector-Emitter-voltage
B shorted
V
CES
50 V
30 V
Collector-Base-voltage
E open
V
CB0
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
225 mW
1
)
Collector current Kollektorstrom (DC)
I
C
500 mA
Peak Coll. current Kollektor-Spitzenstrom
I
CM
1000 mA
Peak Base current Basis-Spitzenstrom
I
BM
200 mA
Peak Emitter current Emitter-Spitzenstrom
- I
EM
1000 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhältnis
V
CE
= 1 V, I
C
= 100 mA
BC817W
BC818W
h
FE
100
600
V
CE
= 1 V, I
C
= 500 mA
h
FE
40
V
CE
= 1 V, I
C
= 100 mA
Group -16W h
FE
100
160
250
Group -25W h
FE
160
250
400
Group -40W h
FE
250
400
600
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
9
01.11.2003
General Purpose Transistors
BC 817W / BC 818W
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
Collector saturation voltage Kollektor-Sättigungsspg.
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
0.7 V
Base saturation voltage Basis-Sättigungsspannung
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
1.2 V
Base-Emitter voltage Basis-Emitter-Spannung
V
CE
= 1 V, - I
C
= 500 mA
V
BE
1.2 V
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 20 V
I
CB0
100 nA
I
E
= 0, V
CB
= 20 V, T
j
= 150
/
C
I
CB0
5
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 4 V
I
EB0
100 nA
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
f
T
100 MHz
170 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
6 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
R
thA
620 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 807W / BC 808W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 817-16W = 6A
BC 817-25W = 6B
BC 817-40W = 6C
BC 817W = 6D
BC 818-16W = 6E
BC 818-25W = 6F
BC 818-40W = 6G
BC 818W = 6H
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