1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
2.
5
ma
x
1.
3
±0
.
1
1.1
2.9
±0.1
0.4
1
2
3
Type
Code
1.9
BC 807 / BC 808
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation Verlustleistung
310 mW
Plastic case
SOT-23
Kunststoffgehäuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 807
BC 808
Collector-Emitter-voltage
B open
- V
CE0
45 V
25 V
Collector-Emitter-voltage
B shorted
- V
CES
50 V
30 V
Collector-Base-voltage
E open
- V
CB0
50 V
30 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
P
tot
310 mW
1
)
Collector current Kollektorstrom (DC)
- I
C
800 mA
Peak Coll. current Kollektor-Spitzenstrom
- I
CM
1000 mA
Peak Base current Basis-Spitzenstrom
- I
BM
200 mA
Peak Emitter current Emitter-Spitzenstrom
I
EM
1000 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhältnis
- V
CE
= 1 V, - I
C
= 100 mA
BC807
BC808
h
FE
100
600
- V
CE
= 1 V, - I
C
= 500 mA
h
FE
40
- V
CE
= 1 V, - I
C
= 100 mA
Group -16
h
FE
100
160
250
Group -25
h
FE
160
250
400
Group -40
h
FE
250
400
600
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
3
01.11.2003
General Purpose Transistors
BC 807 / BC 808
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
Collector saturation voltage Kollektor-Sättigungsspg.
- I
C
= 500 mA, - I
B
= 50 mA
- V
CEsat
0.7 V
Base saturation voltage Basis-Sättigungsspannung
- I
C
= 500 mA, - I
B
= 50 mA
- V
BEsat
1.3 V
Base-Emitter voltage Basis-Emitter-Spannung
- V
CE
= 1 V, - I
C
= 500 mA
- V
BE
1.2 V
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, - V
CB
= 20 V
- I
CB0
100 nA
I
E
= 0, - V
CB
= 20 V, T
j
= 150
/
C
- I
CB0
5
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, - V
EB
= 4 V
- I
EB0
100 nA
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz
f
T
80 MHz
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
12 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
R
thA
320 K/W
1
)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 817 / BC 818
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 807-16 = 5A BC 807-25 = 5B BC 807-40 = 5C
BC 807 = 5D
BC 808-16 = 5E BC 808-25 = 5F
BC 808-40 = 5G
BC 808 = 5H
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