1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
8
01.11.2003
BC 556 ... BC 559
General Purpose Transistors
PNP
Si-Epitaxial PlanarTransistors
PNP
Power dissipation Verlustleistung
500 mW
Plastic case
TO-92
Kunststoffgehäuse
(10D3)
Weight approx. Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 556
BC 557
BC 558/559
Collector-Emitter-voltage
B open
- V
CE0
65 V
45 V
30 V
Collector-Base-voltage
E open
- V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
P
tot
500 mW
1
)
Collector current Kollektorstrom (DC)
- I
C
100 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 55...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Group A
Group B
Group C
DC current gain Kollektor-Basis-Stromverhältnis
- V
CE
= 5 V, - I
C
= 2 mA
h
FE
110...220
200...460
420...800
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain
Stromverstärkung
h
fe
typ. 220
typ. 330
typ. 600
Input impedance Eingangsimpedanz
h
ie
1.6...4.5 k
S
3.2...8.5 k
S
6...15 k
S
Output admittance Ausg.-Leitwert
h
oe
18 < 30
:
S
30 < 60
:
S
60 < 110
:
S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4
Collector saturation voltage Kollektor-Sättigungsspg.
- I
C
= 100 mA, - I
B
= 5 mA
-V
CEsat
300 mV
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
9
01.11.2003
General Purpose Transistors
BC 556 ... BC 559
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Base saturation voltage Basis-Sättigungsspannung
- I
C
= 100 mA, - I
B
= 5 mA
- V
BEsat
1 V
Base-Emitter voltage Basis-Emitter-Spannung
- V
CE
= 5 V, - I
C
= 2 mA
- V
BE
580 mV
660 mV
700 mV
Collector-Emitter cutoff current Kollektorreststrom
- V
CE
= 60 V
BC 556
- I
CE0
0.1
:
A
- V
CE
= 40 V
BC 557
- I
CE0
0.1
:
A
- V
CE
= 25 V
BC 558
- I
CE0
0.1
:
A
- V
CE
= 25 V
BC 559
- I
CE0
0.1
:
A
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
f
T
150 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
6 pF
Emitter-Base Capacitance Emitter-Basis-Kapazität
- V
EB
= 0.5 V, f = 1 MHz
C
EB0
9 pF
Noise figure Rauschzahl
- V
CE
= 5 V, - I
C
= 200
:
A
BC 556...
F
2 dB
10 dB
R
G
= 2 k
S
f = 1 kHz,
BC 558
)
f = 200 Hz
BC 559
F
1 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
R
thA
200 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 546 ... BC 549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 556A
BC 557A
BC 558A
BC 556B
BC 557B
BC 558B
BC 559B
BC 557C
BC 558C
BC 559C
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