DS30270 Rev. 2 - 2
1 of 3
MMBT3904T
MMBT3904T
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·
Epitaxial Planar Die Construction
·
Complementary PNP Type Available
(MMBT3906T)
·
Ultra-Small Surface Mount Package
Characteristic
Symbol
MMBT3904T
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous
I
C
200
mA
Power Dissipation (Note 1)
P
d
150
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
q
JA
833
°
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
°
C
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
A
M
J
L
D
B C
H
K
G
TOP VIEW
C
E
B
Mechanical Data
·
Case: SOT-523, Molded Plastic
·
Case material - UL Flammability Rating 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking (See Page 2): 1N
·
Ordering & Date Code Information, See Page 2
·
Weight: 0.002 grams (approx.)
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
¾
¾
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
a
0°
8°
¾
All Dimensions in mm
DS30270 Rev. 2 - 2
2 of 3
MMBT3904T
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
¾
V
I
C
= 10mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
¾
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
¾
V
I
E
= 10mA, I
C
= 0
Collector Cutoff Current
I
CEX
¾
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
¾
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
40
70
100
60
30
¾
¾
300
¾
¾
¾
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
¾
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
0.65
¾
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
¾
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
¾
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
10
kW
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.5
8.0
x 10
-4
Small Signal Current Gain
h
fe
100
400
¾
Output Admittance
h
oe
1.0
40
m
S
Current Gain-Bandwidth Product
f
T
300
¾
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
¾
5.0
dB
V
CE
= 5.0Vdc, I
C
= 100mAdc,
R
S
= 1.0KW, f = 1.0MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
¾
35
ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Rise Time
t
r
¾
35
ns
Storage Time
t
s
¾
200
ns
V
CC
= 3.0V, I
C
= 10mA
Fall Time
t
f
¾
50
ns
I
B1
= I
B2
= 1.0mA
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Date Code Key
1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1NYM
Marking Information
Notes: 2.
Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
MMBT3904T-7
SOT-523
3000/Tape & Reel
Ordering Information
(Note 3)
DS30270 Rev. 2 - 2
3 of 3
MMBT3904T
0
5
15
10
0.1
1
10
100
C
,
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
I
B
O
C
,
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
O
B
O
V
, COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Cibo
Cobo
f = 1MHz
0
100
150
50
200
250
0
100
200
P
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
d
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Power Derating Curve
(see Note 1)
0.01
0.1
1
0.1
1
10
100
1000
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
(
V
)
C
E
(
S
A
T
)
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
1
10
1000
100
0.1
1
10
1000
100
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.1
1
10
0.1
1
10
100
1000
V
,
B
A
S
E
-
E
M
I
T
T
E
R
(
V
)
B
E
(
S
A
T
)
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
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