DS23007 Rev. 7 - 2
1 of 2
MBR730-MBR760
MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
R
Pin 1 +
Pin 1
Pin 2
Pin 2 -
Case
+
TO-220AC
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
J
0.51
1.14
K
3.53
Æ 4.09Æ
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
R
4.83
5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for
Transient Protection
·
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
Voltage Drop
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
·
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: See Diagram
·
Weight: 2.3 grams (approx.)
·
Mounting Position: Any
·
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
730
MBR
735
MBR
740
MBR
745
MBR
750
MBR
760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
(Note 1)
@ T
C
= 125
°C
I
O
7.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
150
A
Forward Voltage Drop
@ I
F
= 7.5A, T
C
= 25
°C
@I
F
= 7.5A, T
C
= 125
°C
V
FM
0.55
0.70
0.70
0.75
V
Peak Reverse Current
@T
C
= 25
°C
at Rated DC Blocking Voltage
@ T
C
= 125
°C
I
RM
1.0
15
1.0
50
mA
Typical Junction Capacitance (Note 2)
C
j
400
pF
Typical Thermal Resistance Junction to Case (Note 1)
R
qJc
3.5
°C/W
Voltage Rate of Change (Rated V
R
)
dV/dt
10,000
V/
ms
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS23007 Rev. 7 - 2
2 of 2
MBR730-MBR760
0.1
1.0
10
50
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FWD
CURRENT
(A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ Instantaneous Fwd Characteristics
F
MBR730 - MBR745
MBR750 - MBR760
T = 25 C
2% duty cycle
J
°
Pulse width = 300 s
µ
1
10
100
I
,
PEAK
FWD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3 ms Single half
sine-wave (JEDEC method)
25
50
75
100
125
150
175
100
1000
4000
1.0
10
C
,
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
100
0.1
0.001
0.01
0.1
1.0
0
20
40
60
80
100
120
140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 125 C
j
°
T = 75 C
j
°
T = 25 C
j
°
10
Resistive or
Inductive load
0
50
100
150
I
,
A
VERAGE
FWD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE ( C)
Fig. 1 Fwd Current Derating Curve
C
°
0
2
4
6
8
10
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