D
S23017 Rev. E-2 1 of 2 MBR3030PT - MBR3060PT
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
P*
*2 Places
Q
K
S
M
H
R
D
C
TO-3P
Dim
Min
Max
A
3.20
3.50
B
4.59
5.16
C
20.80
21.30
D
19.70
20.20
E
2.10
2.40
G
0.51
0.76
H
15.90
16.40
J
1.70
2.70
K
3.10
Æ
3.30
Æ
L
3.50
4.51
M
5.20
5.70
N
1.12
1.22
P
1.93
2.18
Q
2.97
3.22
R
11.70
12.80
S
4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for
Transient Protection
·
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
Voltage Drop
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
·
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: As Marked on Body
·
Marking: Type Number
·
Weight: 5.6 grams (approx.)
·
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
3030PT
MBR
3035PT
MBR
3040PT
MBR
3045PT
MBR
3050PT
MBR
3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@ T
C
= 125
°C
(Note 1)
I
O
30
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
200
A
Forward Voltage Drop
@ I
F
= 20A, T
C
= 25
°C
per element (Note 3)
@ I
F
= 20A, T
C
= 125
°C
V
FM
0.65
0.60
0.75
0.65
V
Peak Reverse Current
@ T
C
= 25
°C
at Rated DC Blocking Voltage, per element @ T
C
= 125
°C
I
RM
1.0
60
5.0
100
mA
Typical Junction Capacitance
(Note 2)
C
j
700
pF
Typical Thermal Resistance Junction to Case
(Note 1)
R
qJc
1.4
2.0
K/W
Voltage Rate of Change (Rated V
R
)
dV/dt
10,000
V/µs
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width
£300 ms, duty cycle £2%.
D
S23017 Rev. E-2 2 of 2 MBR3030PT - MBR3060PT
0.1
1.0
10
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS F0RWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
100
0
0.2
0.4
MBR 3030PT - MBR 3045PT
MBR 3050PT - MBR 3060PT
0.6
0.8
T = 25°C
j
Pulse width = 300µs
2% duty cycle
0
50
100
150
200
250
300
1
10
100
I
,
PEAK
FWD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
T = 25°C
j
8.3ms Single half-wave
JEDEC Method
100
1000
4000
0.1
1.0
10
100
C
,
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25°C
f = 1MHz
j
0.01
0.1
1.0
10
0
20
40
60
80
100
120
140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 125°C
j
T = 75°C
j
T = 25°C
j
100
0
50
100
150
I
,
A
VERAGE
FWD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
C
0
6
12
18
24
30
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