DS30206 Rev. 3 - 2
1 of 5
BSS138W
www.diodes.com
BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
Low On-Resistance
·
Low Gate Threshold Voltage
·
Low Input Capacitance
·
Fast Switching Speed
Maximum Ratings
@ T
A
= 25
°C unless otherwise specified
Characteristic
Symbol
BSS138W
Units
Drain-Source Voltage
V
DSS
50
V
Drain-Gate Voltage (Note 1)
V
DGR
50
V
Gate-Source Voltage
Continuous
V
GSS
±20
V
Drain Current (Note 2)
Continuous
I
D
200
mA
Total Power Dissipation (Note 2)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
qJA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
·
Case: SOT-323, Molded Plastic
·
Case Material - UL Flammability Rating 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking Code (See Page 2): K38
·
Ordering & Date Code Information: See Page 2
·
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
E
D
B C
H
K
G
G
S
D
Electrical Characteristics
@ T
A
= 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
BV
DSS
50
75
¾
V
V
GS
= 0V, I
D
= 250
mA
Zero Gate Voltage Drain Current
I
DSS
¾
¾
0.5
µA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
¾
¾
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
0.5
1.2
1.5
V
V
DS
= V
GS
, I
D
= -250
mA
Static Drain-Source On-Resistance
R
DS (ON)
¾
1.4
3.5
W
V
GS
= 10V, I
D
= 0.22A
Forward Transconductance
g
FS
100
¾
¾
mS
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
¾
¾
50
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
¾
¾
25
pF
Reverse Transfer Capacitance
C
rss
¾
¾
8.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
¾
¾
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50
W
Turn-Off Delay Time
t
D(OFF)
¾
¾
20
ns
Note: 1. R
GS
£ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
°
8
°
All Dimensions in mm
Source
Gate
Drain
DS30206 Rev. 3 - 2
2 of 5
BSS138W
www.diodes.com
Ordering Information
Device
Packaging
Shipping
BSS138W-7
SOT-323
3000/Tape & Reel
(Note 4)
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38
YM
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
0
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Transfer Characteristics
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
0
1
1.5
0.5
2
3.5
4
4.5
2.5
3
I
,
DRAIN-SOURCE
CURRENT
(A)
D
-55
°C
150
°C
25
°C
V
= 1V
DS
0
0.1
0.2
0.3
0.4
0.5
0.6
1
0
3
2
5
4
7
6
8
9
10
I
,
DRAIN-SOURCE
CURRENT
(A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
T = 25
°C
j
V
= 3.5V
GS
V
= 3.25V
GS
V
= 3.0V
GS
V
= 2.75V
GS
V
= 2.5V
GS
DS30206 Rev. 3 - 2
3 of 5
BSS138W
www.diodes.com
0
I , DRAIN CURRENT (A)
D
Fig. 5 Drain-Source On Resistance vs. Drain Current
1
2
3
4
5
6
7
8
0
0.02
0.04
0.06
0.08
0.16
0.14
0.12
0.1
R
,
DRAIN-SOURCE
ON
RESIST
ANCE
(
W
)
DS(ON)
150
°C
-55
°C
25
°C
V
= 2.5V
GS
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-40
-55
5
-25 -10
50
20
35
80
95
65
110 125
140
V
,
GA
TE
THRESHOLD
V
OL
T
AGE
(V)
GS(th)
T , JUNCTION TEMPERATURE (°C)
j
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
I = 1.0mA
D
0.65
T , JUNCTION TEMPERATURE (°C)
j
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55
-5
45
95
145
R
,
NORMALIZED
D
RAIN-SOURCE
O
N
R
ESIST
A
NCE
(
W
)
DS(ON)
V
= 10V
GS
V
= 4.5V
GS
I = 0.5A
D
I = 0.075A
D
DS30206 Rev. 3 - 2
4 of 5
BSS138W
www.diodes.com
0
0.5
1
1.5
2
2.5
3
3.5
0.05
0
0.15
0.1
0.25
0.2
0.35
0.3
0.4
0.45
0.5
I , DRAIN CURRENT (A)
D
Fig. 8 Drain-Source On Resistance vs. Drain Current
150
°C
-55
°C
25
°C
V
= 10V
GS
0
1
2
3
4
5
6
0.05
0
0.15
0.1
0.25
0.2
0.35
0.3
0.4
0.45
0.5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 7 Drain-Source On Resistance vs. Drain Current
150
°C
-55
°C
25
°C
V
= 4.5V
GS
0
I , DRAIN CURRENT (A)
D
Fig. 6 Drain-Source On Resistance vs. Drain Current
1
2
3
5
4
6
7
8
9
0
0.05
0.1
0.2
0.15
0.25
150
°C
-55
°C
25
°C
V
= 2.75V
GS
DS30206 Rev. 3 - 2
5 of 5
BSS138W
www.diodes.com
C,
CAP
A
CIT
A
NCE
(
pF)
1
10
100
V
, DRAIN SOURCE VOLTAGE (V)
DS
Fig. 10 Capacitance vs. Drain Source Voltage
0
5
10
15
20
25
30
V
= 0V
GS
f = 1MHz
C
rSS
C
OSS
C
iSS
I,
D
I
O
DE
CURRENT
(A)
D
0.001
0.01
0.1
1
V
, DIODE FORWARD VOLTAGE (V)
SD
Fig. 9 Body Diode Current vs. Body Diode Voltage
0
0.2
0.4
0.6
0.8
1
1.2
150
°C
-55
°C
25
°C
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