DS11402 Rev. F-3
1 of 3
BS850
BS850
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
·
High Input Impedance
·
Fast Switching Speed
·
CMOS Logic Compatible Input
·
No Thermal Runaway or Secondary
Breakdown
·
Surface Mount Package Ideally Suited
for Automatic Assembly
·
Case: SOT-23, Plastic
·
Terminals: Solderable per MIL-STD-202
Method 208
·
Pin Connection: See Diagram
·
Marking: S50
·
Weight: 0.008 grams (approx.)
Mechanical Data
Features
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage
V
DGS
60
V
Gate-Source Voltage (pulsed)
V
GS
±20
V
Drain Current (continuous)
I
D
250
mA
Power Dissipation @T
C
= 25°C (Note 1)
P
d
310
mW
Operating and Storage Temperature Range
T
j
, T
STG
-65 to+150
°C
Characteristic
Symbol
Value
Unit
Maximum Forward Current (continuous)
I
F
0.30
A
Forward Voltage Drop (typ.) @ V
GS
= 0, I
F
= 0.12A, T
j
= 25°C
V
F
0.85
V
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Notes:
1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm
2
area.
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
DISCONTINUED,
FOR NEW DESIGN
USE BSS84
DS11402 Rev. F-3
2 of 3
BS850
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Notes:
1. Device mounted on ceramic substrate 0.7mm; 2.5 cm
2
area.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
-V
(BR)DSS
60
90
--
V
-I
D
= 100µA, V
GS
= 0
Gate Threshold Voltage
V
GS(th)
--
1.0
3.0
V
-V
GS
= V
DS
, I
D
= 1.0mA
Gate-Body Leakage Current
-I
GSS
--
--
10
nA
-V
GS
= 15V, V
DS
= 0
Drain-Source Cutoff Current
-I
DSS
--
--
0.5
µA
-V
DS
= 25V, V
GS
= 0
Drain-Source ON Resistance
r
DS (ON)
--
3.5
5.0
W
-V
GS
= 10V, I
D
= 0.2A
Thermal Resistance, Junction to Ambient Air
R
qJA
--
--
400
K/W
Note 1
Thermal Resistance Junction to
Substrate Backside
R
qJSB
--
--
320
K/W
Note 1
Forward Transconductance
g
FS
--
200
--
m
m
-V
DS
= 10V, I
D
= 0.2A,
f = 1.0MHz
Input Capacitance
C
iss
--
60
--
pF
-V
DS
= 10V, V
GS
=0, f = 1.0MHz
Switching Times
Turn On Time
Turn Off Time
t
on
t
off
--
5.0
25
--
ns
-V
GS
= 10V, V
DS
= 10V,
R
D
= 100
W
DISCONTINUED,
FOR NEW DESIGN
USE BSS84
DS11402 Rev. F-3
3 of 3
BS850
0
500
-I , DRAIN CURRENT (mA)
Fig. 6. Transconductance vs. Drain Current
D
g
,
FOR
W
ARD
TRANSCONDUCT
ANCE
(mm)
fs
0
100
200
300
400
500
200
300
100
400
Pulse test width 80 s;
pulse duty factor 1%
-V
= 10V
DS
0
100
200
T , AMBIENT TEMPERATURE ( C)
Fig. 1. Power Derating Curve
A
P
,
POWER
DISSIP
AT
I
O
N
(
W
)
d
0
0.1
0.2
0.3
0.4
0.5
(See Note 1)
0
10
-V , GATE-SOURCE VOLTAGE (V)
Fig. 5. Transconductance vs Gate-Source Voltage
GS
g
,
FOR
W
ARD
TRANSCONDUCT
ANCE
(mm)
fs
100
200
300
400
500
4
6
2
8
-V
= 10V
DS
0
Pulse test width 80 s;
pulse duty factor 1%
0
100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2. Output Characteristics
DS
-I
(ON),
DRAIN
SOURCE
ON
CURRENT
(A)
D
0
0.2
0.4
0.6
0.8
1
40
60
20
80
-V
= 6V
GS
5V
3V
4V
7V
T = 25 C
A
Pulse test width 80 s;
pulse duty factor 1%
0
10
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 3. Saturation Characteristics
DS
-I
(ON),
DRAIN
SOURCE
ON-CURRENT
(mA
)
D
0
100
200
300
400
500
4
6
2
8
-V
= 5V
GS
3.5V
3.0V
T = 25 C
A
4.0V
4.5V
Pulse test width 80 s;
pulse duty factor 1%
0
10
-V , GATE-SOURCE VOLTAGE (V)
Fig. 4. Drain Current vs Gate-Source Voltage
GS
-I
,
DRAIN
CURRENT
(A)
D
0
0.2
0.4
0.6
0.8
1.0
4
6
2
8
Pulse test width 80 s;
pulse duty factor 1%
T = 25 C
A
-V
= 10V
DS
DISCONTINUED,
FOR NEW DESIGN
USE BSS84
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