·
Epitaxial Die Construction
·
Complementary NPN Type Available
(BC847BLP)
·
Ultra-Small Leadless Surface Mount Package
·
Lead Free By Design/RoHS Compliant (Note 1)
·
"Green" Device (Note 2)
Lead-free Green
DS30526 Rev. 7 - 2
1 of 4
BC857BLP
www.diodes.com
©
Diodes Incorporated
BC857BLP
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-100
mA
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Features
Mechanical Data
·
Case: DFN1006-3
·
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification
Rating 94V-0
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminal Connections Indicator: Collector Dot
·
Terminals: Finish
NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
·
Ordering Information: See Page 3
·
Marking Code 3W, Dot denotes Collector Side
·
Weight: 0.001 grams
D
G
H
B C
L
N
A
M
K
C
E
B
1
2
3
DFN1006-3
Dim
Min
Max
Typ
A
0.95
1.075
1.00
B
0.55
0.675
0.60
C
0.45
0.55
0.50
D
0.20
0.30
0.25
G
0.47
0.53
0.50
H
0
0.05
0.03
K
0.10
0.20
0.15
L
0.20
0.30
0.25
M
0.35
N
0.40
All Dimensions in mm
TOP VIEW
Thermal Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
P
d
250
mW
Thermal Resistance, Junction to Ambient
R
JA
400
°C/W
T
C
U
D
O
R
P
W
E
N
SPICE MODEL: BC857BLP
DS30526 Rev. 7 - 2
2 of 4
BC857BLP
www.diodes.com
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3)
V
(BR)CBO
-50
--
--
V
I
C
= 10
µ
A, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 3)
V
(BR)CEO
-45
--
--
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 3)
V
(BR)EBO
-5
--
--
V
I
E
= 1
µ
A, I
C
= 0
DC Current Gain (Note 3)
h
FE
220
260
475
--
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 3)
V
CE(SAT)
--
90
250
-300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 3)
V
BE(SAT)
--
--
-700
-850
--
--
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 3)
V
BE(ON)
-600
--
-670
-710
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 3)
I
CBO
--
--
--
--
-15
-4.0
nA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
--
--
MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
--
3.0
--
pF
V
CB
= -10V, f = 1.0MHz
@ T
A
= 25°C unless otherwise specified
0
150
100
50
200
250
300
350
1
100
10
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical Collector-Emitter Saturation
Voltage vs. Collector Current
V
,
C
O
L
L
E
C
T
O
R
T
O
E
M
I
T
T
E
R
(
C
E
)
S
A
T
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
m
V
)
Ic/Ib=20
T = 150ºC
A
T = -55ºC
A
T = 25ºC
A
T = 85ºC
A
T = 125ºC
A
0
50
100
0
25
50
75
100
125
150
P
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Derating Curve
150
200
250
300
T
C
U
D
O
R
P
W
E
N
Note:
3. Short duration pulse test used to minimize self-heating effect.
DS30526 Rev. 7 - 2
3 of 4
BC857BLP
www.diodes.com
3W
Marking Information
3W = Product Type Marking Code,
Dot Denotes Collector Side
Note:
4. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information
Device
Packaging
Shipping
BC857BLP-7
DFN1006-3
3000/Tape & Reel
(Note 4)
V
,
B
A
S
E
-
E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E
(
m
V
)
B
E
(
O
N
)
I , COLLECTOR CURRENT (mA)
C
Fig. 4,
Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
200
400
600
800
0
2
4
6
8
10
V
= 5V
CE
T = -55ºC
A
T = 150ºC
A
T = 125ºC
A
T = 25ºC
A
T = 85ºC
A
I , COLLECTOR CURRENT (mA)
C
Fig. 3,
Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V
,
B
A
S
E
T
O
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
(
B
E
)
S
A
T
V
O
L
T
A
G
E
(
V
)
1
100
10
Ic/Ib=20
T = 150ºC
A
T = -55ºC
A
T = 125ºC
A
T = 25ºC
A
T = 85ºC
A
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
I , COLLECTOR CURRENT (mA)
C
Fig. 5,
Typical DC Current Gain
vs. Collector Current
1,000
1
10
100
1,000
1
10
100
T = 150ºC
A
T = -55ºC
A
T = 85ºC
A
T = 25ºC
A
T = 125ºC
A
T
C
U
D
O
R
P
W
E
N
DS30526 Rev. 7 - 2
4 of 4
BC857BLP
www.diodes.com
T
C
U
D
O
R
P
W
E
N
Suggested Pad Layout
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at
www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
0.30
1.30
R = 0.05 (12x)
R = 0.05 (12x)
0.30
(2x)
0.40
(2x)
0.50
(2x)
0.30
0.90
0.20
Dimensions in mm.
0.40
0.50
0.60 0.70 0.80
solder lands
solder resist
occupied area
solder paste
0.25
0.35
(2x)
(2x)
PDF 
ZIP