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Part Number BC847BV

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Pb
Lead-free
SEE NOTE 1
DS30432 Rev. 2 - 2
1 of 3
BC847BV
www.diodes.com
ã
Diodes Incorporated
BC847BV
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current
I
C
100
mA
Power Dissipation (Note 2)
P
d
150
mW
Thermal Resistance, Junction to Ambient (Note 2)
R
qJA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
·
Epitaxial Die Construction
·
Complementary PNP Type Available (BC857BV)
·
Ultra-Small Surface Mount Package
·
Lead Free By Design/RoHS Compliant (Note 3)
·
Case: SOT-563
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020C
·
Terminal Connections: See Diagram
·
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
·
Marking (See Page 2): K4V
·
Ordering & Date Code Information: See Page 2
·
Weight: 0.002 grams (approx.)
Mechanical Data
A
M
L
B C
H
K
G
D
K4V YM
C
1
B
2
E
2
C
2
E
1
B
1
T
C
U
D
O
R
P
W
E
N
SOT-563
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
0.11
All Dimensions in mm
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180
° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
C
1
B
2
E
2
C
2
E
1
B
1
SPICE MODELS: BC847BV
DS30432 Rev. 2 - 2
2 of 3
BC847BV
www.diodes.com
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 4)
V
(BR)CBO
50
--
--
V
I
C
= 10
mA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 4)
V
(BR)CEO
45
--
--
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 4)
V
(BR)EBO
6
--
--
V
I
E
= 1
mA, I
C
= 0
DC Current Gain (Note 4)
h
FE
200
290
450
--
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 4)
V
CE(SAT)
--
--
100
300
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 4)
V
BE(SAT)
--
700
900
--
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 4)
V
BE
580
--
660
--
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Emitter Cutoff Current (Note 4)
I
CBO
I
CBO
--
--
15
5.0
nA
µA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
--
--
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Output Capacitance
C
OBO
--
--
4.5
pF
V
CB
= 10V, f = 1.0MHz
Noise Figure
NF
--
--
10
dB
V
CE
= 5V, R
S
= 2.0k
W,
f = 1.0kHz, BW
= 200Hz
T
C
U
D
O
R
P
W
E
N
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Date Code Key
K4V = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: P = 2003)
M = Month (ex: 9 = September)
K4V YM
Marking Information
Ordering Information
(Note 5)
Device
Packaging
Shipping
BC847BV-7
SOT-563
3000/Tape & Reel
Year
2003
2004
2005
2006
2007
2008
2009
Code
P
R
S
T
U
V
W
DS30432 Rev. 2 - 2
3 of 3
BC847BV
www.diodes.com
T
C
U
D
O
R
P
W
E
N
1
0.1
10
100
1000
V
,
COLLECT
OR
T
O
EMITTER
CE(SA
T)
SA
TURA
TION
VOL
T
AGE
(V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
I
C
I
B
= 20
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (
°C)
A
Fig. 1, Derating Curve - Total
P
,
POWER
DISSIP
A
TION
(mW)
d
1
100
10
1000
1
10
100
f
,
GAIN
BANDWIDTH
PRODUCT
(MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Gain Bandwidth Product vs Collector Current
V
= 5V
CE
1
10
100
1000
10
100
1000
1
h
D
C
CURRENT
GAIN
(NORMALIZED)
FE,
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs Collector Current
T = 25
°C
A
T = -50
°C
A
T = 150
°C
A